Magneto-resistive element

ABSTRACT

The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm 2 .

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to magneto-resistive elements that arewidely used, for example, in magnetic random access memory (MRAM) usedin data communication terminals, for example, and to manufacturingmethods for the same.

2. Description of the Related Art

It is known that when a current flows through a multilayer filmincluding ferromagnetic material/intermediate layer/ferromagneticmaterial in a direction traverse to the intermediate layer, amagneto-resistive effect occurs due to the spin tunneling effect if theintermediate layer is a tunneling insulating layer, and amagneto-resistive effect occurs due to the CPP (current perpendicular tothe plane)-GMR effect if the intermediate layer is a conductive metal,such as Cu. Both magneto-resistive effects depend on the size of theangle between the magnetizations of the magnetic materials sandwichingthe intermediate layers (magnetization displacement angle). In theformer, the magneto-resistive effect occurs due to changes of thetransition probability of tunneling electrons flowing through the twomagnetic layers depending on the magnetization displacement angle, andin the latter the magneto-resistive effect occurs due to changes in thespin-dependent scattering.

When such a TMR element is used for a magnetic head or an MRAM device,one of the two magnetic layers sandwiching the intermediate layer canserve as a pinned magnetic layer, in which magnetization rotations withrespect to an external field are difficult, by layering anantiferromagnetic material of FeMn or IrMn onto it, whereas the otherlayer serves as a free magnetic layer, in which magnetization rotationswith respect to an external field are easy (spin-valve element).

When applying these vertical current-type resistive elements for exampleto a magnetic head or memory elements of an MRAM, for example in areproduction element for tape media, then the area of the intermediatelayer through which current flows should be not larger than several 1000μm², in order to achieve the demanded high recording densities or highinstallation densities. Especially in HDDs and MRAMs or the like, anelement area of not more than several μm² is desired. If the elementarea is large, magnetic domains form relatively easily in the freemagnetic layer Therefore, there are the problems of Barkhausen noise dueto magnetic wall transitions when used as a reproduction element, andinstabilities of the switching magnetization when used for the memoryoperation of MRAMs. On the other hand, in a region, in which the filmthickness of the free magnetic layer with respect to the element areacannot be ignored, the demagnetizing field due to shape anisotropiesbecomes large, so that especially when used as a reproduction head, thedecrease of the reproduction sensitivity brought about by an increase ofthe coercivity becomes a problem. When used as an MRAM, the increase ofthe reversal magnetic field becomes a problem.

In order to suppress the demagnetizing field, the film thickness of thefree magnetic layer can be made thinner. However, at submicrondimensions, the film thickness of the magnetic layer necessary tosuppress the demagnetizing field becomes less than 1 nm, which is belowthe physical film thickness limit of magnetic films.

Using the TMR elements for an MRAM, a thermal process at about 400° C.is performed in a semiconductor process of hydrogen sintering or apassivation process. However, it has been reported that in conventionalpinned layers, in which IrMn or FeMn is arranged in contact with amagnetic layer, the MR is decreased by the decrease of the spinpolarizability of the magnetic layer due to diffusion of Mn attemperatures of about 300° C. or above, and the decrease of the pinningmagnetic field due to the dilution of the composition of theantiferromagnetic material (see S. Cardoso et.al., J. Appl.Phys. 87,6058(2000)).

In previously proposed methods for reading non-volatile MRAM elements,the read-out is difficult when there are large variations in elementresistance or in the resistance of switching element and electrode,because what is read out is the change of magnetic resistance of themagneto-resistive element with respect to the total resistance ofmagneto-resistive elements connected in series to a switching elementand an electrode. In order to improve the SIN, a method of reading anelement with the voltage between that element and a reference elementhas been proposed, but in that case, the higher integration of theelements becomes a problem, because the reference element is necessary(see p. 37, Proceedings of 112^(th) Study Group of the Magnetics Societyof Japan).

SUMMARY OF THE INVENTION

According to a first aspect of the present invention, a verticalcurrent-type magneto-resistive element includes an intermediate layerand a pair of magnetic layers sandwiching the intermediate layer,wherein one of the magnetic layers is a free magnetic layer in whichmagnetization rotation with respect to an external magnetic field iseasier than in the other magnetic layer, wherein the free magnetic layeris a multilayer film including at least one non-magnetic layer andmagnetic layers sandwiching the non-magnetic layer, and wherein anelement area through which current flows is not larger than 1000 μm²,preferably not larger than 10 μm², more preferably not larger than 1μm², most preferably not larger than 0.1 μm². The element area isdefined by the area of the intermediate layer through which the currentflows perpendicular to the film plane. Providing the free magnetic layeras a multilayer structure of magnetic and non-magnetic layers suppressesthe demagnetizing field, which increases as the element area becomessmaller. Here, the magnetic and non-magnetic layers can be single layersor multilayers. It is preferable that the free magnetic layer performsmagnetization rotation at an external magnetic field causingmagnetization rotation that is at least 50 Oe (ca. 4 kA/m) smaller thanthat required for magnetization rotation of the other magnetic layers(usually, the pinned magnetic layer). Especially when the element isused for a memory, it is preferable that magnetization rotation at avalue of 10 to 500 Oe is possible.

It is preferable that, in particular near 0.5 nm of the interface withthe intermediate layer, the magnetic layers are made of a ferromagneticor ferrimagnetic material including at least 50 wt % of (i) a Co-basedamorphous material such as CoNbZr, CoTaZr, CoFeB, CoTi, CoZr, CoNb,CoMoBZr, CoVZr, CoMoSiZr, CoMoZr, CoMoVZr or CoMnB, (ii) an Fe-basedmicrocrystal material, such as FeSiNb or Fe(Si,Al,Ta,Nb,Ti)N, (iii) amagnetic material containing at least 50 wt % of a ferromagnetic metalelement selected from Fe, Co and Ni, for example ferromagnetic or dilutemagnetic materials like FeCo alloy, NiFe alloy, NiFeCo alloy, FeCr,FeSiAl, FeSi, FeAl, FeCoSi, FeCoAl, FeCoSiAl, FeCoTi, Fe(Ni)Co)Pt,Fe(Ni)(Co)Pd, Fe(Ni)(Co)Rh, Fe(Ni)(Co)Ir or Fe(Ni)(Co)Ru, (iv) anitride, such as FeN, FeTiN, FeAlN, FeSiN, FeTaN, FeCoN, FeCoTiN,FeCoAlN, FeCoSiN, FeCoTaN, (v) Fe₃O₄, (vi) a half metal, such as XMnSb(wherein X is at least one selected from Ni, Cu and Pt), LaSrMnO,LaCaSrMnO or CrO₂, (vii), a spinel oxide such as a perovskite oxide,MnZn ferrite or NiZn ferrite, or (viii) a garnet oxide. In thisspecification, elements or layers in parentheses are optional ones.

It is preferable that the area of the free magnetic layer is wider thanthe element area. If the area of the free magnetic layer issubstantially the same as the element area, then the MR decreases due tothe influence of disturbances of the domain structure that occur at theedge of the free magnetic layer. When the area of the free magneticlayer is larger than the element area, and when the free magnetic layeris formed to cover the element area sufficiently, then the edges of thefree magnetic layer are separated from the element area, so that themagnetization direction inside the free magnetic layer that contributesto the magnetic resistance can be kept uniform.

It is preferable that the magneto-resistive element includes anon-magnetic layer with a thickness d in the range of 2.6 nm≦d<10 nm,because that facilitates magnetization rotation of the free magneticlayer. It seems that the demagnetizing field energy is reduced by themagnetostatic coupling of the magnetic poles occurring due to the shapeanisotropy between the magnetic layers located on both sides of thenon-magnetic layer. By providing the free magnetic layer with theabove-described configuration, the magnetic domains are simplified, anda high MR can be attained. If “d” is 10 nm or more, then themagnetostatic coupling between the magnetic layers becomes weak and thecoercivity increases. If “d” is less than 2.6 nm, then the exchangecoupling becomes dominant. In that case, it is preferable that thethickness of the magnetic layers is at least 1 nm and at most 100 nm, inwhich range suitable magnetostatic coupling is attained. Thenon-magnetic material can be any non-magnetic metal, oxide, nitride orcarbide, such as Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W Al, SiO₂, SiC, Si₃N₄,Al₂O₃, AlN, Cr₂O₃, Cr₂N, TiO, TiN, TiC, HfO₂, HfN, HfC, Ta₂O₅, TaN, TaC,BN or B₄C, and preferably it is a material at which mutual diffusionwith the magnetic layer does not occur easily when thermally processingat 200° C. to 400° C.

It is preferable that when the magnetic layers constituting the freemagnetic layer are coupled by magnetostatic coupling, taking themagnetic layers that are arranged at positions m (m=1, 2, . . . ) fromthe intermediate layer as magnetic layers m, and taking the productMm×dm of average saturation magnetization Mm of the magnetic layers mand their average layer thickness dm, the sum of the products Mm×dm forodd m is substantially equal to the sum of the products Mm×dm for evenm. This is, because by stopping magnetic field leakages from themagnetic layer and simplifying the magnetic domains, a magneto-resistiveelement with improved magnetization responsiveness with respect to anexternal magnetic field and with a higher MR can be attained. Here,“substantially equal” means that differences of up to ±10% can betolerated.

It should be noted that throughout this specification, “saturationmagnetization” means the value of the magnetization that can beeffectively attained by the magnetic layers constituting the freemagnetic layer when applying an external magnetic field of a size asunder actual usage conditions of the element. That is to say, it isdifferent from the saturation magnetization as determined by thematerial composition. This is because, especially in magnetic layers ofabout several nm thickness per layer, the domain forms that can beobtained depend on the substantial film density and film structure,which change with the type of primer layer and the growth process of themagnetic layer, as well as the film thickness.

When the magnetic layers constituting the free magnetic layer arecoupled by magnetostatic coupling, the sum of the products Mm×dm for oddm may be different from the sum of the products Mm×dm for even m. Whenthey are substantially the same, then the leakage flux between themagnetic layers constituting the free magnetic layer is mainly closed bymagnetostatic coupling. Consequently, even when processing so as toprovide the free magnetic layers with shape anisotropies, a bistablemagnetization state, which usually can be observed in single-layermagnetic films, is difficult to attain. Therefore, the element becomesdifficult to apply to devices in which the free magnetic layer serves asthe memory. However, if the sum of the products Mm×dm for odd m isdifferent from the sum of the products Mm×dm for even m, that is, if itis not substantially the same, then a magneto-resistive element can beattained, in which magnetization reversals are easy and a bistablemagnetization state can be preserved.

It is preferable that the magneto-resistive element includes anon-magnetic layer with a thickness d in the range of 0.3 nm<d<2.6 nm.The magnetization rotation of the free magnetic layer becomes easierwhen the thickness of the non-magnetic layer is in that range. Thisseems to be because the demagnetizing field energy is reduced byantiferromagnetic coupling between the magnetic layers adjacent to thenon-magnetic layer. When the free magnetic layer has the above-describedstructure, the domains are simplified, and a high MR can be attained.When “d” is 0.3 or less, then the thermal stability deteriorates. When“d” is 2.6 nm or more, the magnetostatic coupling becomes dominant.Moreover, for the coupling brought about by a thermal process with atleast 260° C., “d” is preferably in the range of 0.8 nm to 2.6 nm. Inthat case, it is preferable that the thickness of the magnetic layers isat least 0.5 nm and at most 100 nm, in which range suitableantiferromagnetic coupling is attained.

The non-magnetic material can be a conductive metal or metal compound,and in particular, Cu, Ag, Au, Ru, Rh, Ir, Re and Os are preferable.Also preferable are alloys of these metals and alloys or compoundscontaining at least 50 wt % of these metal elements. These alloys andcompounds have excellent thermal stability, and the element resistanceis increased in particular when used for CPP-GMR.

When the magnetic layers constituting the free magnetic layer arecoupled by antiferromagnetic coupling, it is preferable that taking themagnetic layers arranged at positions m (m=1, 2, . . . ) from theintermediate layer as magnetic layers m, and taking the product Mm×dm ofaverage saturation magnetization Mm of the magnetic layers m and theiraverage layer thickness dm, the sum of the products Mm×dm for odd m isdifferent from the sum of the products Mm×dm for even m. If the productMm×dm of the layers for odd m is the same as that of the layers for evenm, then magnetization rotation is difficult when the external magneticfield is weak, because the magnetic layers are coupled byantiferromagnetic coupling. By making the extent to which thedemagnetizing field increases different (for example, 0.5 to 2 T•nm),magnetization rotations in response to an external magnetic field becomeeven easier, and a magneto-resistive element with a low reversalmagnetic field and high MR can be attained.

It is preferable that in the above-described element, the free magneticlayer includes a first magnetic layer, a non-magnetic layer and a secondmagnetic layer, layered in that order from the intermediate layer, andwhen an average film thickness of the first magnetic layer is d1, itsaverage saturation magnetization is M1, an average film thickness of thesecond magnetic layer is d2, and its average saturation magnetization isM2, then

1.1<(M1×d1+M2×d2)/S<20;

(wherein S is the absolute value of M1×d1−M2×d2); and (i) taking theeffective film thickness d11 of the first magnetic layer as

 d11=(M1×d1−M2×d2)/M1

when M1×d1−M2×d2>0, and

(ii) taking the effective film thickness d22 of the second magneticlayer as

d22=(M2×d2−M1×d1)/M2

when M1×d1−M2×d2<0,

and taking as Nm the demagnetizing factor in the free magnetic layersurface in a direction of an applied external magnetic field, determinedfrom the effective film thickness d11 or d22 and the free magnetic layersurface shape, then Nm<0.02. When the value of (M1×d1+M2×d2)/S is 1.1 orless, then the effect of simplifying the magnetic domains becomes weak,and when it is 20 or greater, then there is a considerable increase inthe coercivity. Moreover, if the demagnetizing factor Nm of an appliedmagnetic field direction, determined from the surface shape of the freemagnetic layer (for example, circular or rectangular) and the effectivefilm thickness d11 or d22, is 0.02 or greater, then there aredisturbances in the magnetic domain shape, and there is an increase inthe energy necessary for magnetization rotation.

It is preferable that, when M2×d2>M1×d1, the magnetic materialconstituting the second magnetic layer is a soft magnetic material or ahard magnetic material, and the magnetic material constituting the firstmagnetic layer is a high spin polarization material at least at aninterface with the intermediate layer. If the product M2×d2 of the softmagnetic material is larger than the product M1×d1 of the high spinpolarization material, then the magnetization rotation in response to anexternal magnetic field is easy, and a magneto-resistive element withfew magnetic domain disturbances and a high MR can be attained. Such amagneto-resistive element with easy magnetization rotation can be usedas a magnetic sensor, but if the free magnetic layer is used for amemory element, then it can be used as a stable magnetic memory byproviding a suitable shape anisotropy in the film plane of the freemagnetic layer. On the other hand, if the product M2×d2 of the hardmagnetic material is larger than the product M1×d1 of the high spinpolarization material, then the magnetization rotation in response to anexternal magnetic field is difficult, and a magneto-resistive elementwith few magnetic domain disturbances and a high MR can be attained.Using a hard magnetic material, a stable magnetic memory can beattained, even with small shape anisotropies. Here, it is preferable touse a material with a spin polarizability of at least 0.45, morepreferably at least 0.5, as the high spin polarization material.

It is preferable to use, for example, CoPt, FePt, CoCrPt, CoTaPt, FeTaPtor FeCrPt as the hard magnetic material.

For the soft magnetic material, it is preferable to use an alloy such asNi₈₁Fel₁₉, FeSiAl, FeSi or Fe₉₀Co₁₀, a Co-based amorphous material suchas CoNbZr, CoTaZr, CoFeB, CoTi, CoZr, CoNb, CoMoBZr, CoVZr, CoMoSiZr,CoMoZr, CoMoVZr or CoMnB, an Fe-based microcrystal material such asFeSiNb or Fe(Si, Al, Ta, Nb, Ti)N, or an oxide material such as MnZnferrite or NiZn ferrite.

In the high spin polarization material, it is preferable to include atleast 50 wt % of (i) a metal ferromagnetic material of which at least 50wt % is made of a ferromagnetic metal element selected from Fe, Co andNi, for example a FeCo alloy with the compositionFe_(x)Co_((100-x))(15≦X≦100), NiFe alloy with the compositionNi_(x)Fe_((100-x))(40≦X≦70), NiFeCo alloy, ferromagnetic or dilutemagnetic alloys, such as FeCr, FeSiAl, FeSi, FeAl, FeCoSi, FeCoAl,FeCoSiAl, FeCoTi, Fe(Ni)(Co)Pt, Fe(Ni)(Co)Pd, Fe(Ni)(Co)Rh, Fe(Ni)(Co)Irand Fe(Ni)(Co)Ru, (ii) a nitride such as FeN, FeTiN, FeAlN, FeSiN,FeTaN, FeCoN, FeCoTiN, FeCoAlN, FeCoSiN, FeCoTaN, (iii) Fe₃O₄, (iv) ahalf metal ferromagnetic material, such as XMnSb (wherein X is at leastone selected from Ni, Cu and Pt), LaSrMnO, LaCaSrMnO or CrO₂, (v) anoxide, such as a perovskite oxide, a spinel oxide, or a garnet oxide.

In the above-described element, it is also possible that the freemagnetic layer includes a first magnetic layer, a non-magnetic layer anda second magnetic layer, layered in that order from the intermediatelayer, and when an average film thickness of the first magnetic layer isd1, its average saturation magnetization is M1, an average filmthickness of the second magnetic layer is d2, and its average saturationmagnetization is M2, then M2×d2>M1×d1, and a magneto-resistive elementcan be devised in which the magnetic resistance displays at least onemaximum or minimum in response to a change of the external magneticfield. Here, the two magnetic layers constituting the free magneticlayer are coupled by antiferromagnetic coupling or magnetostaticcoupling through the non-magnetic layer, such that it can be made surethat their magnetizations are antiparallel to one another. If thebehavior of the magnetization rotation with respect to the size of themagnetic field is different, then it is also possible to use magneticlayers (free magnetic layers) in which magnetization rotations arepossible on both sides of the intermediate layer. When two free magneticlayers are arranged so as to sandwich the intermediate layer, at leastone free magnetic layer, preferably at least the layer in whichmagnetization rotated more easily, includes a first magnetic layer, anon-magnetic layer and a second magnetic layer, and the relationM2×d2>M1×d1 is satisfied, then the magnetic resistance displays at leastone minimum or maximum with respect to changes in the external magneticfield.

When an external magnetic field is applied, first, the second magneticlayer is rotated in the direction of the external magnetic field. Thefirst magnetic layer is coupled to the second magnetic layer byantiferromagnetic or magnetostatic coupling, and is oriented insubstantially the opposite direction with respect to the externalmagnetic field. Furthermore, when a larger external magnetic field isapplied, a spin-flop reversal occurs (in the following, magnetostaticcoupling reversals with strong coupling are also referred to as “spinflops”), and all magnetic layers are oriented in the direction of theexternal magnetic field. Consequently, when the magnetization directionof the other magnetic layer flanking the intermediate layer is regardedas substantially constant, the magnetic resistance displays a maximum orminimum with respect to changes of the external magnetic field near thespin flops. Assuming that M2×d2<M1×d1, this maximum or minimum does notappear clearly. If the two magnetic layers that sandwich theintermediate layer both include a first magnetic layer, a non-magneticlayer, a second magnetic layer, formed in that order from theintermediate layer, and the relation M2×d2>M1×d1 is satisfied, whereinan average film thickness of the first magnetic layer is d1, its averagesaturation magnetization is M1, an average film thickness of the secondmagnetic layer is d2, and its average saturation magnetization is M2,and if they have a different coercivity or spin flop magnetic field withrespect to the external magnetic field, then it is possible to attain atleast two maxima or minima.

The maxima or minima with respect to the external magnetic field allow amulti-level response of the magnetic resistance with respect to theexternal magnetic field. If a magnetic field is applied in a directionin which a spin flop occurs in the free magnetic layer, then it ispossible to non-destructively read out, with the change of the magneticresistance when applying an external magnetic field, the magnetizationdirection of at least the second magnetic layer that has been as storedthe magnetization direction, utilizing the fact that it returnsreversibly when the external magnetic field is removed.

The intensity of the spin flop magnetic field can be controlled by thetype and thickness of the magnetic films, and the type and thickness ofthe non-magnetic films. The coercivity can be easily adjusted with thecrystal grain size of the material, the crystal magnetic anisotropicenergy of the material itself, the element shape, the film thicknesses,and the shape magnetic anisotropic energy, which is a function of thesaturation magnetization.

In the above-described element, it is preferable that the free magneticlayer comprises a first magnetic layer, a first non-magnetic layer, asecond magnetic layer, a second non-magnetic layer, and a third magneticlayer, layered in that order from the intermediate layer, and when anaverage film thickness of the magnetic layer n is dn, and its averagesaturation magnetization is Mn (with n=1, 2, 3), then M3×d3>M1×d1 andM3×d3>M2×d2; and, with respect to an external magnetic field, a couplingmagnetic field of the first magnetic layer and the second magnetic layermay be smaller than a memory reversal magnetic field. In this element,the memory direction of the magnetization of the third magnetic layer isdetected with the change of the magnetic resistance when applying amagnetic field that is smaller than the memory reversal magnetic fieldbut larger than the coupling magnetic field in a memory direction of themagnetization of the third magnetic layer.

Here, the third magnetic layer, which is a memory layer, has the highestcoercivity or magnetization reversal magnetic field of all magneticlayers constituting the free magnetic layer, and is coupled stronglywith the second magnetic layer by antiferromagnetic coupling,ferromagnetic coupling or magnetostatic coupling. The second magneticlayer and the first magnetic layer are coupled by antiferromagneticcoupling or magnetostatic coupling. The other ferromagnetic layerflanking the intermediate layer has a magnetization reversal magneticfield that is high with respect to the free magnetic layer, and it canbe regarded substantially as a pinned magnetic layer. If, for example,the third magnetic layer and the second magnetic layer, as well as thesecond magnetic layer and the first magnetic layer are mutually coupledby antiferromagnetic coupling, then a spin flop occurs between the firstmagnetic layer and the second magnetic layer due to a step (i) ofapplying an external magnetic field in a direction that is the same asthe magnetization direction stored by the third magnetic layer, and themagnetization of the second magnetic layer changes to parallel to theexternal magnetic field. In this step (i), there is hardly any change inthe magnetization displacement angle between the pinned layer and thefirst magnetic layer. When removing the external magnetic field, themagnetization of the second magnetic layer returns to its initial state.Of course, it is also possible to use a magnetic field of a strength atwhich no spin flops occur between the first magnetic layer and thesecond magnetic layer. On the other hand, in a step (ii) of applying anexternal magnetic field antiparallel to the magnetization direction thatis stored by the third magnetic layer, the magnetization direction ofthe first magnetic layer is changed to be parallel to the externalmagnetic field, and the magnetization displacement angle between thepinned magnetic layer and the first magnetic layer changes.

If the external magnetic field is of a strength at which the thirdmagnetic layer is not reverted, then, when the external magnetic fieldof (ii) is removed, the magnetization of the first magnetic layerreturns to its initial state. By applying the external magnetic fieldscorresponding to these steps (i) and (ii), and detecting the change ofthe magnetic resistance, it is possible to determine the memory state ofthe magnetization of the third magnetic layer non-destructively.Usually, in vertical current-type magneto-resistive elements, theelement resistance including the wiring resistance is detected, and themagnetization is detected, but because of variations of the elementresistance and variations of the wiring resistance, it is not possibleto make a decision if there is not a considerable change in the magneticresistance. In order to overcome these issues, it has been proposed toread the operation voltage of a reference element, but this leads tomore complicated wiring and lower circuit integration. There is also thepossibility of detecting the memory state by applying an externalmagnetic field and changing the memory direction, but this destructs thememory state. With the present invention, the memory state of themagneto-resistive element can be detected non-destructively.

In the above-described element, the free magnetic layer is sandwiched bytwo intermediate layers, and includes magnetic and non-magnetic layerslayered in alternation. The two magnetic layers (pinned magneticlayers), in which magnetization rotation is difficult, should bearranged on the outer sides of the two intermediate layers, with respectto the free magnetic layer. In the free magnetic layer sandwiched by thetwo pinned magnetic layers, the softness of the free magnetic layer andthe symmetry of the response with respect to external magnetic fields issignificantly harmed by the magnetic coupling with the pinned magneticlayers. If the free magnetic layer is devised as a multilayer structurewith magnetostatic coupling or antiferromagnetic coupling, then theinfluence of the magnetic field leaking from the pinned magnetic layerscan be reduced. Moreover, letting the free magnetic layer have amultilayer structure is also effective for suppressing the demagnetizingfield of the free magnetic layer that comes with miniaturization.

In the above-described element, it is preferable that the free magneticlayer is sandwiched by two intermediate layers, and is made of 2nmagnetic layers (with n being an integer of 1 or greater) and 2n−1non-magnetic layers layered in alternation. Two magnetic layers in whichmagnetization rotations are difficult (pinned magnetic layers) should befurther placed in opposition to the free magnetic layer on the outersides of the two intermediate layers.

If the coupling among the magnetic layers forming the free magneticlayer is relatively weak, then the magnetization response to externalmagnetic fields is good. This seems to be because the 2n magnetic layersperform magnetization rotation under the loose constraints of therespective magnetization, so that the demagnetizing energy is suitablylowered. On the other hand, when the magnetic coupling sandwiching thenon-magnetic material is strong, there is the effect that the domainstructure of the 2n magnetic layers is improved, or the demagnetizingfield is suppressed. It should be noted that the strength of themagnetic coupling, such as the magnetostatic coupling orantiferromagnetic coupling between the magnetic layers, can becontrolled by the type and thickness of the non-magnetic material.

It is also possible practically to connect two magneto-resistiveelements in series. In order to let the two elements connected in seriesdisplay the largest change of magnetic resistance, the magnetizationdirection with maximum and minimum of the magnetic resistance of the twoelements should be the same. If the polarity of the twomagneto-resistive elements (that is, when the magnetic layerssandwiching the intermediate layer are parallel, the resistance is low,when they are antiparallel, the resistance is high, or, when themagnetic layers sandwiching the intermediate layer are parallel, theresistance is high, when they are antiparallel, the resistance is low)is the same, then, when the elements take on the same magnetizationarrangement, the largest magnetic resistance changes with respect tochanges of the external magnetic field can be attained.

If there are 2n magnetic layers and the magnetic coupling between themagnetic layers constituting the free magnetic layer is sufficientlyweaker than the external magnetic field, then any of those 2n layers canbe aligned easily with the external magnetic field. In this situation,if the polarity of the two magneto-resistive elements is the same, thenthe maximum magnetic resistance change can be attained when themagnetization directions of the two pinned magnetic layers are parallel.

If there are 2n magnetic layers and the magnetic coupling between themagnetic layers constituting the free magnetic layer is sufficientlystronger than the external magnetic field, and the magnetization ofneighboring magnetic layers is anti-parallel, then, if the polarity ofthe two magneto-resistive elements is the same, the maximum magneticresistance change can be attained when the magnetization directions ofthe two pinned magnetic layers are anti-parallel. The magnetizationdirection of the pinned magnetic layer can be controlled by changing thenumber of layers of the ferrimagnetic structure.

In the above-described element, it is preferable that the elementincludes a first pinned magnetic layer, a first intermediate layer, afirst magnetic layer, a non-magnetic layer, a second magnetic layer, asecond intermediate layer and a second pinned magnetic layer formed inthat order, and when an average film thickness of the magnetic layer n(with n being 1 or 2) is dn, and its average saturation magnetization isMn, then M2×d2≠M1×d1. Here, antiferromagnetic coupling or magnetostaticcoupling is performed, so that the magnetization of the first magneticlayer is anti-parallel to the magnetization of the second magneticlayer. By making them anti-parallel, magnetization reversals occur withthe difference between M2×d2 and M1×d1 serving as an effective magneticlayer.

Taking as an example the case where the polarity of a magneto-resistiveelement including a first pinned magnetic layer, a first intermediatelayer and a first magnetic layer is the same as the polarity of amagneto-resistive element including a second magnetic layer, a secondintermediate layer and a second pinned magnetic layer, it is preferablethat the magnetization directions of the first pinned layer and thesecond pinned layer are anti-parallel.

The magnetization directions of the first pinned magnetic layer and thesecond pinned magnetic layer are made anti-parallel for example when thefirst pinned magnetic layer is a single ferromagnetic layer in contactwith a first antiferromagnetic material, and the second pinned magneticlayer is a configured as ferromagnetic material/non-magneticmaterial/ferromagnetic material contacting a second antiferromagneticmaterial. This is only an example, and a similar effect also can beattained when changing the number of layers of the ferrimagneticstructure of the pinned layer, the number of layers of the free magneticlayer, or taking magneto-resistive elements with different polarity,which cases utilize the same principle.

In the above-described elements, it is preferable that at least one freemagnetic layer is sandwiched by two intermediate layers, and is made of2n+1 magnetic layers (with n being an integer of 1 or greater) and 2nnon-magnetic layers layered in alternation. Two further magnetic layersin which magnetization rotations are difficult (pinned magnetic layers)should be placed in opposition to the free magnetic layer, on the outerside of the two intermediate layers.

If the coupling among the magnetic layers forming the free magneticlayer is relatively weak, then the magnetization response to externalmagnetic fields is good. This seems to be because the 2n+1 magneticlayers perform magnetization rotation with loose constraints of therespective magnetization, so that the demagnetizing energy is suitablylowered. On the other hand, when the magnetic coupling sandwiching thenon-magnetic material is strong, there is the effect that the domainstructure of the 2n+1 magnetic layers is improved, or the demagnetizingfield is suppressed. It should be noted that the strength of themagnetic coupling, such as the magnetostatic coupling orantiferromagnetic coupling between the magnetic layers, can becontrolled by the type and thickness of the non-magnetic material.

If there are 2n+1 magnetic layers and the magnetic coupling between themagnetic layers constituting the free magnetic layer is sufficientlyweaker than the external magnetic field, then any of those 2n+1 layerscan be aligned easily with the external magnetic field. In thissituation, if the polarity of the two magneto-resistive elements is thesame, then the maximum magnetic resistance change can be attained whenthe magnetization directions of the two pinned magnetic layers areparallel.

Similarly, if there are 2n+1 magnetic layers and the magnetic couplingbetween the magnetic layers constituting the free magnetic layer issufficiently stronger than the external magnetic field, and themagnetization of neighboring magnetic layers is anti-parallel, then, ifthe polarity of the two magneto-resistive elements is the same, themaximum magnetic resistance change can be attained when themagnetization directions of the two pinned magnetic layers are parallel.

It is preferable that the magneto-resistive element includes a firstpinned magnetic layer, a first intermediate layer, a first magneticlayer, a first non-magnetic layer, a second magnetic layer, a secondnon-magnetic layer, a third magnetic layer, a second intermediate layerand a second pinned magnetic layer formed in that order, and that, whenan average film thickness of the magnetic layer n is dn (with n being 1,2 or 3), and its average saturation magnetization is Mn, thenM3×d3+M1×d1≠M2×d2.

Here, the first magnetic layer, the second magnetic layer and the thirdmagnetic layer are coupled by antiferromagnetic coupling ormagnetostatic coupling, so that their magnetizations are anti-parallelto one another. When the relation M3×d3+M1×d1>M2×d2 is satisfied, thefirst magnetic layer and the third magnetic layer function effectivelyas magnetic layers with respect to external magnetic fields. In thatcase, because the second magnetic layer is magnetically coupled to thefirst magnetic layer and the third magnetic layer, it does not functionapparently as a magnetic layer with respect to external magnetic fields,but when the first magnetic layer and the third magnetic layer perform amagnetization rotation in response to the external magnetic field, itperforms a substantially simultaneous magnetization rotation whilemaintaining antiferromagnetic coupling or magnetostatic coupling withthose layers. On the other hand, when the relation M3×d3+M1×d1<M2×d2 issatisfied, then the second magnetic layer functions effectively as amagnetic layer with respect to external magnetic fields. In that case,because the first magnetic layer and the third magnetic layer aremagnetically coupled to the second magnetic layer, they do not functionapparently as magnetic layers, but when the second magnetic layerperform a magnetization rotation in response to the external magneticfield, they performs a substantially simultaneous magnetizationrotation.

If the polarity of a magneto-resistive element including a first pinnedmagnetic layer, a first intermediate layer and a first magnetic layer isthe same as the polarity of a magneto-resistive element including athird magnetic layer, a second intermediate layer and a second pinnedmagnetic layer, then the maximum magnetic resistance change can beattained when the magnetization directions of the first pinned magneticlayer and the second pinned magnetic layer are the same. However, asimilar effect also can be attained when changing the number of layersof the ferrimagnetic structure of the pinned magnetic layer, the numberof layers of the free magnetic layer, or taking magneto-resistiveelements with different polarity, which cases utilize the sameprinciple.

In the above-described elements, it is preferable that at least one ofthe magnetic layers of the free magnetic layer has a coercivity orsaturation magnetization that is different from the other magneticlayers.

For example, consider the case that the free magnetic layer is amultilayer film of magnetic and non-magnetic layers, and when taking themagnetic layers arranged at positions m (m=1, 2, . . . ) from theintermediate layer as magnetic layers m, and taking the product Mm×dm ofaverage saturation magnetization Mm of the magnetic layers m and theiraverage film thickness dm, the sum of the products Mm×dm for odd m issubstantially the same as the sum of the products Mm×dm for even m, andthe magnetic layers are coupled by antiferromagnetic coupling ormagnetostatic coupling. In that configuration, if during themicroprocessing, all magnetic layers have the same coercivity byappropriate selection of materials and film thicknesses, then themagnetization rotation of the free magnetic layer is easy, whereas thestorage of the magnetization state is difficult. However, when using forone magnetic layer a material whose coercivity is higher than that ofthe other magnetic layers, the demagnetizing field effect occurring dueto the miniaturization can be suppressed, and a suitable coercivity forstoring the magnetization state in the free magnetic layer can becreated. This configuration has the advantage that a more stable andsuitable coercivity can be attained than with storage by uniaxialanisotropy utilizing shape anisotropy, which depends strongly on theprecision of the element miniaturization, and in which an overly largecoercivity results easily from the miniaturization.

As another example, consider the case that, when taking the magneticlayers constituting the free magnetic layers arranged at positions m(m=1, 2, . . . ) from the intermediate layer as magnetic layers m, andtaking the product Mm×dm of average saturation magnetization Mm of themagnetic layers m and their average layer thickness dm, the sum of theproducts Mm×dm for odd m is different from the sum of the products Mm×dmfor even m, and the magnetic layers are coupled by antiferromagneticcoupling or strong magnetostatic coupling. The reversal magnetic fieldof the miniaturized elements is substantially proportional to thedifference of the product Mm×dm of the odd layers and the even layers.Mm or dm can be controlled to preserve a suitable reversal magneticfield in the microprocessed elements. However, in microprocessedelements of submicron dimension, there are technical limitations to theactual control of the film thickness, and variations in the reversalmagnetic fields occur. Consequently, the variations in the reversalmagnetic fields of elements in large areas can be controlled when amaterial with small M is chosen for the magnetic layers responsible forthe reversal magnetic field.

It also is preferable to combine at least two magneto-resistiveelements. A magneto-resistive element A has a free magnetic layer asdescribed above, wherein the free magnetic layer comprises a firstmagnetic layer, a first non-magnetic layer and a second magnetic layer,layered in that order from the intermediate layer, and whereinM2×d2>M1×d1. A magneto-resistive element B has an intermediate layer anda free magnetic layer, wherein the free magnetic layer comprises a firstmagnetic layer and a second magnetic layer, positioned in that orderfrom the intermediate layer, and wherein M3×d3>M4×d4. The element A andthe element B respond to the same external magnetic field, and theoutput of element A and B is added to or subtracted from one another.The free magnetic layer in the element B may be composed of magneticlayers.

In this configuration, the first magnetic layer of the element A and thesecond magnetic layer of the element B point in the same direction asthe external magnetic field. Consequently, the first magnetic layer inopposition to the intermediate layer points into different directions inelement A and element B. If the pinned layers in element A and element Bare oriented in the same direction, then, with respect to externalmagnetic fields of the same direction, the orientation of the externalmagnetic field at which element A has the largest resistance isdifferent from that at which element B has the largest resistance. Whenused as a device, the peripheral circuit resistance is added to theresistance value of the magneto-resistive element, so that an adequateS/N ratio cannot be attained, but when combining the elements A and B asdescribed above, the base resistance (circuit resistance+elementresistance for low resistances) is canceled, thus attaining a high S/Nratio.

In another configuration of the present invention, the verticalcurrent-type magneto-resistive element includes an intermediate layer;and a pair of magnetic layers sandwiching the intermediate layer;wherein one of the magnetic layers is a pinned magnetic layer in whichmagnetization rotation with respect to an external magnetic field ismore difficult than in the other magnetic layer; wherein the pinnedmagnetic layer is in contact with a primer layer or an antiferromagneticlayer; and wherein an element area, which is defined by the area of theintermediate layer through which current flows perpendicular to the filmplane, is not larger than 1000 μm², preferably not larger than 10 μm²,more preferably not larger than 1 μm², most preferably not larger than0.1 μm².

The pinned magnetic layer has a multilayer structure including anon-magnetic layer and magnetic layers sandwiching the non-magneticlayer, and a thickness d of the non-magnetic layer is in the range of0.3 nm<d<2.6 nm.

It is preferable that magnetization rotation of the pinned magneticlayer occurs at field strengths that are at least 50 Oe higher than forthe other magnetic layer (free magnetic layer).

With this configuration, the non-magnetic layer and the magnetic layersare coupled by antiferromagnetic coupling, the domains are simplified,and a high MR can be attained. In this situation, when d is 0.3 nm orless, the thermal stability deteriorates. When d is 2.6 nm or higher,the afore-mentioned magnetostatic coupling becomes dominant. If thermalprocessing is performed at temperatures of 300° C. or higher, then it ispreferable that d is in the range of 0.7 nm to 2.6 nm. It is preferablethat the thickness of the magnetic layers is about 0.3 nm to 10 nm, inwhich range strong antiferromagnetic coupling is attained.

For the non-magnetic material, it is possible to use a conductive metalor a metal compound, in particular Cu, Ag, Au, Ru, Rh, Ir, Re or Os.Furthermore, it is also possible to use metal alloys of these, or analloy or compound containing at least 50 wt % of these metals.

Magnetization rotation with respect to external magnetic fields can bemade difficult with a configuration in which, when the magnetic layers mare the magnetic layers in the pinned magnetic layer that are arrangedat positions m (with m being an integer of 1 or greater) from theintermediate layer, Mm is an average saturation magnetization of themagnetic layers m and dm is their respective average layer thickness,then the sum of the products Mm×dm for odd m is substantially equal tothe sum of the products Mm×dm for even m.

However, when the free magnetic layer is domain controlled by a biasmagnetic field, or when the free magnetic layer is positively coupledwith the intermediate layer, due to the so-called orange peel effect orthe like, then it is also possible to generate a bias by letting the sumof the products Mm×dm for odd m slightly deviate from the sum of theproducts Mm×dm for even m, in order to rectify magnetic field shifts.However, it is preferable that the upper limit for this slight deviationis not larger than 2 nmT, expressed by saturation magnetization×filmthickness.

It is also possible to combine two or more elements, including amagneto-resistive element A including a pinned magnetic layer, in which2n imagnetic layers and 2n−1 non-magnetic layers (with n being aninteger of 1 or greater) are layered in alternation from theintermediate layer; and a magneto-resistive element B, in which 2n+1magnetic layers and 2n non-magnetic layers are layered in alternationfrom the intermediate layer (with n=1, 2, 3 . . . ); wherein the elementA and the element B respond to the same external magnetic field; andwherein the outputs of element A and element B are added to orsubtracted from one another. Here, it is preferable that themagnetization directions of the magnetic layers constituting the pinnedmagnetic layers are antiparallel, due to antiferromagnetic coupling ormagnetostatic coupling.

With this configuration, if the polarity of the element A and theelement B is the same (that is, if the magnetization directions of themagnetic layers sandwiching the intermediate layer are parallel, thenthe resistance is low (or high), and if the magnetization directions areantiparallel, then the resistance is high (or low)), then, with respectto external magnetic fields from the same direction, the directions ofthe external magnetic fields for which element A has its maximumresistance and for which B has its maximum resistance are different.When used as a device, the peripheral circuit resistance is added to theresistance value of the magneto-resistive element, so that an adequateS/N ratio cannot be attained, but when combining the elements A and B asdescribed above, the base resistance (circuit resistance +elementresistance for low resistances) is canceled, thus attaining a high S/Nratio.

The thermal resistance is further improved when at least a portion ofthe non-magnetic material of the free magnetic layers, or of thenon-magnetic material of the pinned magnetic layers is made of at leastone compound selected from oxides, nitrides, carbides and borides. Thisis, because the energy value for these compounds is more stable than theenergy value for mutual diffusions with the magnetic layers. However,overall, the non-magnetic layers should have a sufficiently lowresistance.

As an example in which a portion of the non-magnetic material is of theabove-mentioned compound, the non-magnetic film can be a multilayer filmof at least one layer of non-magnetic material including at least oneselected from oxides, nitrides, carbides and borides, and at least onenon-magnetic metal layer. For example, the thermal resistance improveswhen using a multilayer film of at least two layers including anon-magnetic metal X (X═Cu, Ag, Au, Ru, Rh, Ir, Re, Os) and an Rselected from oxides, nitrides, carbides and borides (R═SiO₂, SiC,Si₃N₄, Al₂O₃, AlN, Cr₂O₃, Cr₂N, TiO, TiN, TiC, HfO₂, HfN, HfC, Ta₂O₅,TaN, TaC, BN, B₄C. or mixtures of the above).

When using a primer layer that includes at least one element selectedfrom the elements of groups IVa to VIa and VIII (but excluding Fe, Coand Ni) and Cu, then, especially when the pinned layer is a multilayerfilm including magnetic and non-magnetic layers, strongantiferromagnetic coupling is attained directly after the filmformation, without using an antiferromagnetic material such as IrMn,FeMn or the like. Moreover, since no Mn-including antiferromagneticmaterial is used, the decrease of the MR due to Mn diffusion during thethermal process can be suppressed. The primer layer preferably iscomposed of the above at least one element.

If the primer layer is in contact with a magnetic layer, and the primerlayer and that magnetic layer include at least one crystal structureselected from fcc and hcp structure, or both include a bcc structure,then the antiferromagnetic coupling between the magnetic layers of thepinned layer becomes particularly strong.

If the antiferromagnetic layer is made of Cr and at least one selectedfrom the group consisting of Mn, Tc, Ru, Rh, Re, Os, Ir, Pd, Pt, Ag, Auand Al, then an excellent thermal resistance is attained. This alloyalso can include up to 10 at % of an element other than those mentionedabove.

A particularly superior thermal resistance can be attained if theantiferromagnetic layer has a composition that can be expressed byCr_(100-x)Me_(x) (wherein Me is at least one selected from the groupconsisting of Re, Ru and Rh, and 0.1≦X≦20).

An excellent thermal resistance can be attained in particular when theantiferromagnetic layer has a composition that can be expressed byMn_(100-x)Me_(x) (wherein Me is at least one selected from the groupconsisting of Pd and Pt, and 40≦X≦55). This seems to be because a higheramount of noble metals is contained than in IrMn or FeMn. It is alsopossible that the MnMe composition contains up to 10 at % of anotherelement such as Tc, Ru, Rh, Re, Os, Ir, Pd, Pt, Ag, Au or Al.

The thermal resistance is further improved when the antiferromagneticlayer is formed on a primer layer, and the primer layer and theantiferromagnetic layer include at least one crystal structure selectedfrom fcc, fct, hcp and hct structure, or the primer layer and theantiferromagnetic layer both include a bcc structure. This seems to bebecause the crystal growth of the antiferromagnetic layer is promoted bythe primer layer, and by reducing strain, the diffusion of elementsconstituting the antiferromagnetic material can be suppressed.

The crystallinity of the antiferromagnetic layer can be improved inparticular when the antiferromagnetic layer can be expressed byMn_(100-x)Me_(x) (wherein Me is at least one selected from the groupconsisting of Pd and Pt, and 40≦X≦55), and the primer layer is made ofNiFe or NiFeCr. In that case, a considerable increase of thermalresistance for thermal processing at temperatures of at least 300° C.can be observed.

This seems to be the effect of decreasing strain by increasing thecrystallinity, and suppressing grain growth during the thermalprocessing.

When the magnetic layer in contact with the antiferromagnetic layer ismade of Co, the mutual diffusion of antiferromagnetic material issuppressed even better.

It is preferable that at least a portion of the magnetic layer incontact with at least one selected from the antiferromagnetic layer andthe non-magnetic layer is made of a ferromagnetic material including atleast one element selected from the group consisting of oxygen, nitrogenand carbon. This is because the deterioration of the MR based oninter-layer diffusion during the thermal process can be suppressed byusing a material that is relatively thermally stable. This magneticlayer also can be of (i) a three-layer structure such as (metalferromagnetic material)/(ferromagnetic material including oxygen,nitrogen or carbon)/(metal ferromagnetic material), (ii) a two-layerstructure such as (ferromagnetic material including oxygen, nitrogen orcarbon)/(metal ferromagnetic material), or (iii) the entire magneticlayer can be made of a ferromagnetic material including oxygen ornitrogen. As a ferromagnetic material including oxygen, it is preferableto use spinel oxides for which ferrite materials such as Fe₃O₄, MnZnferrite and NiZn ferrite are typical examples, garnet oxides, perovskiteoxides, or oxide ferromagnetic materials such as TMO (with T being oneselected from Fe, Co and Ni, and M being one selected from Al, Si, Ti,Zr, Hf, V, Nb, Ta, Cr and Mg). As a ferromagnetic material includingnitrogen, it is preferable to use a ferromagnetic nitride material suchas TN or TMN (with T and M as above). As a ferromagnetic materialincluding carbon, it is preferable to use a ferromagnetic carbidematerial such as TMC (with T and M as above).

In the above-described elements, it is also possible that at least aportion of the magnetic layer in contact with at least one selected fromthe antiferromagnetic layer and the non-magnetic layer is made of anamorphous ferromagnetic material, because this suppresses inter-layerdiffusion during thermal processing. As an amorphous material, it ispreferable to use Co(Fe)NbZr, Co(Fe)TaZr, CoFeB, Co(Fe)Ti, Co(Fe)Zr,Co(Fe)Nb, Co(Fe)MoBZr, Co(Fe)VZr, Co(Fe)MoSiZr, Co(Fe)MoZr, Co(Fe)MoVZror Co(Fe)MnB.

It is preferable that, when df is a thickness of the pinned magneticlayer and da is a thickness of the ferromagnetic layer, then

2 nm≦df≦50 nm,

5 nm≦da≦100 nm,

0.1≦df/da≦5.

If the pinned magnetic layer is thinner than 2 nm, then a magneticdeterioration of the pinned layer due to diffusion of antiferromagneticmaterial may occur. If the pinned magnetic layer is thicker than 50 nm,then domain disturbances may occur due to the increase of theantiferromagnetic field in the film plane caused by miniaturization, orit may not be possible to attain a sufficient pinning magnetic field dueto the antiferromagnetic material. If the antiferromagnetic material isthinner than 5 nm, then it may not be possible to attain a sufficientpinning magnetic field. If the antiferromagnetic material is thickerthan 100 nm, then inter-layer diffusion may promote magnetic fielddeterioration of the pinning layer. Especially after thermal processingof at least 350° C., a preferable ratio of df and da with littledeterioration of the MR is 0.1≦df/da≦5. If df/da is smaller than 0.1,then inter-layer diffusion tends to occur, and if it is larger than 5,then the pinning magnetic field due to the antiferromagnetic materialtends to become weak, or domain disturbances due to the demagnetizingfield tend to become large.

It is also possible that the above-described element is formed on alower electrode made of a metal multilayer film. The lower electrodethrough which current flows into the element should have a thickness ofseveral dozen nm to several hundred nm, in order to suppress propertyvariations due to shape effects. Therefore, depending on the thermalprocessing temperature, grain growth cannot be ignored and contributesto property variations. It is possible to increase the thermalresistance by providing the lower electrode with a multilayer structureof different materials, in order to suppress grain growth.

It is preferable that the metal multilayer film is a multilayer filmincluding a highly conductive metal layer having at least one selectedfrom the group consisting of Ag, Au, Al and Cu as a main component, anda grain-growth suppression layer of a metal (i) having at least oneelement selected from groups IVa to VIa and VIII (Ti, Zr, Hf, V, Nb, Ta,Cr, Mo, W. Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt) as a main component, or(ii) of a compound selected from the group consisting of conductiveoxides, conductive nitrides and conductive carbides. It is preferablethat the thickness of the highly conductive metal film is about severalnm to 100 nm and that the thickness of the grain-growth suppressionlayer is about several nm to several nm. In this specification, a maincomponent means a component of 50 wt % or more in the composition.

If the intermediate layer is made of an insulator or a semiconductorincluding at least one element selected from the group consisting ofoxygen, nitrogen, carbon and boron, then a vertical current-typemagneto-resistive element utilizing the tunneling magnetic resistanceeffect can be attained. Examples of preferable materials for theintermediate layer include SiO₂, SiC, Si₃, N₄, Al₂O₃, AlN, Cr₂O₃, TiC,HfO₂, HfN, HfC, Ta₂O₅, TaN, TaC, BN, B₄C., DLC(Diamond like Carbon) andC₆₀, as well as mixtures of these compounds.

If the intermediate layer is made of at least one metal selected fromtransition metals, or at least one conductive compound selected fromcompounds of transition metals with oxygen, nitrogen and carbon, then avertical current-type magneto-resistive element utilizing the CPP-GMReffect having lower coercivity and high thermal resistance can beproduced. For this CPP-GMR element, it is preferable that the elementarea is not larger than 0.01 μm².

When the element area is not larger than 0.01 μm², then the elementresistance can be improved, and the problems of deterioration ofcoercivity due to the miniaturization and deterioration of the thermalresistance both can be solved.

For the intermediate layer, it is preferable to use at least one of thetransition metals, in particular V, Nb, Ta, Cr, Mo, W, Cu, Ag, Au, Ru,Rh, Ir, Re or Os. The element resistance can be improved and the thermalresistance can be improved by using a conductive compound of theseelements that has been oxidized, nitrided or carbided to an extent atwhich their conductivity is not lost; or an oxide, nitride, carbide orboride compound XR of an R (with R═SiO₂, SiC, Si₃N₄, Al₂O₃, AlN, Cr₂O₃,Cr₂N, TiO, TiN, TiC, HfO₂, HfN, HfC, Ta₂O₅, TaN, TaC, BN, B₄C. orcomposites of the above) with the above-mentioned transition metals X;or a multilayer film X/R of at least two layers.

If at least a portion of at least one of the magnetic layers sandwichingthe intermediate layer comprises a ferromagnetic material includingoxygen, nitrogen or carbon, or an amorphous ferromagnetic material, thenit is possible to increase the element resistance of the verticalcurrent-type magneto-resistive element due to the CPP-GMR effect. As aferromagnetic material including oxygen, it is preferable to use spineloxides for which ferrite materials such as Fe₃O₄, MnZn ferrite and NiZnferrite are typical examples, garnet oxides, perovskite oxides, or oxideferromagnetic materials such as TMO (with T being one selected from Fe,Co and Ni, and M being one selected from Al, Si, Ti, Zr, Hf. V, Nb, Ta,Cr and Mg). As a ferromagnetic material including nitrogen, it ispreferable to use a ferromagnetic nitride material such as TN or TMN(with T and M as above). As a ferromagnetic material including carbon,it is preferable to use a ferromagnetic carbide material such as TMC(with T and M as above). As an amorphous material, it is preferable touse, for example, Co(Fe)NbZr, Co(Fe)TaZr, CoFeB, Co(Fe)Ti, Co(Fe)Zr,Co(Fe)Nb, Co(Fe)MoBZr, Co(Fe)VZr, Co(Fe)MoSiZr, Co(Fe)MoZr, Co(Fe)MoVZror Co(Fe)MnB.

If the free magnetic layer of the vertical current-typemagneto-resistive element serves as a magnetic memory layer, then it canbe used as a memory element with high SIN ratio and low powerconsumption.

If at least a portion of the free magnetic layer of the verticalcurrent-type magneto-resistive element serves as a flux guide, then theelement can be used as a magnetic reproduction element with high SINratio and low Barkhausen noise.

When “a” is the longest width of the element shape of the free magneticlayer, “b” is its shortest width, and a/b is in the range of 5<a/b<10,then a magneto-resistive element with high memory stability or amagneto-resistive element with high reproduction sensitivity can beproduced.

If the vertical current-type magneto-resistive element is subjectedfirst to heat treatment at 300° C. to 450° C., and then to heattreatment in a magnetic field at 200° C. to 400° C., then excellent MRproperties can be attained. Here, the former heat treatment may bethermal processing that is e.g. sintering in hydrogen containingatmosphere or formation of a passivation film. Performing heat treatmentin a magnetic field after thermal processing near the Neel point or theblocking temperature, the pinned magnetization direction of theantiferromagnetic material in particular is set uniformly.

Especially with elements using an antiferromagnetic layer, an evenstronger pinned magnetic field can be attained by heat treatment in amagnetic field at 300° C. to 450° C.

If the vertical current-type magneto-resistive element of the presentinvention is mounted together with other semiconductor devices, then aheat treatment at 200° C. to 350° C. should be performed in a magneticfield after forming a multilayer film made of at least oneantiferromagnetic layer, a pinned magnetic layer, an intermediate layerand a free magnetic layer on a substrate provided with, for example,CMOS semiconductor elements and lead electrodes, and theantiferromagnetic material and free magnetic material etc. are subjectedto a uniaxial anisotropy formation step.

It is preferable that this step is performed before the miniaturizationof the magnetic multilayer film, when the influence of the demagnetizingfilm is smallest. In the process of element microprocessing andelectrode wiring, oxides of the electrodes etc. are reduced, and withthe goal of reducing the wiring resistances, heat treatment is performedin a reducing atmosphere, such as a hydrogen-containing atmosphere, of300° C. to 450° C. To perform further heat treatment in a magnetic fieldafter performing the heat treatment in the reducing atmosphere isadvantageous with regard to the element properties, and considering theoxidation of the electrodes etc., it is advantageous with regard to themanufacturing process to perform the heat treatment in the magneticfield beforehand. In particular, PtMn and PtPdMn are preferable asantiferromagnetic materials.

It is also possible to devise a portable device equipped with aplurality of vertical current-type magneto-resistive elements, whereindata that have been communicated by electromagnetic waves are stored inthe free magnetic layers of the vertical current-type magneto-resistiveelements. With such a device, it is possible to realize low powerconsumption due to the low coercivity, in addition to the non-volatilityand speed of MRAMs, so that it can be used as a memory necessary forhigh-speed reading and writing of large capacities, as for video oraudio.

The magneto-resistive element can also include a first pinned magneticlayer, a first intermediate layer, a first free magnetic layer, anon-magnetic conductive layer, a second free magnetic layer, a secondintermediate layer and a second pinned magnetic layer formed in thatorder, wherein at least one of the first free magnetic layer and thesecond free magnetic layer includes one or more magnetic layers and oneor more non-magnetic layers layered in alternation.

By electrically connecting, through a non-magnetic conductive layer, inseries a first pinned magnetic layer, a first intermediate layer, afirst free magnetic layer, a second free magnetic layer, a secondintermediate layer and a second pinned magnetic layer, the deteriorationof the magnetic resistance at identical bias can be diminished, if theintermediate layers are insulating layers using the tunneling effect.Moreover, if the intermediate layers are made of a conductive materialutilizing the CPP-GMR effect, the element resistance can be increased bythe serial connection. If the free magnetic layers are in the regionsandwiched by the two intermediate layers, variations of themagnetization reversals due to the distribution of the external magneticfield can be suppressed. The demagnetizing field due to miniaturizationcan be diminished, when at least one of the free magnetic layers hasmagnetic and non-magnetic layers layered in alternation.

In the magneto-resistive element, it is also preferable that magneticlayers that are adjacent but spaced apart by a non-magnetic conductivelayer are magnetized antiparallel to one another. If magnetic layersthat are adjacent but spaced apart by a non-magnetic conductive layerare magnetized parallel to one another, then the magnetostatic energy ofthe neighboring magnetization through the non-magnetic conductive layeris increased, so that non-symmetries with respect to the externalmagnetic fields occur. Therefore, even when the two free magnetic layersare on the same side of the intermediate layer, the responsiveness ofmagnetic resistance changes with respect to the external magnetic fielddeteriorates as a result. By making them antiparallel, the increase ofthe magnetostatic energy can be minimized, and the element drivingstability during miniaturization can be improved.

In the magneto-resistive element, it is preferable that the non-magneticconductive layer has a thickness of 2.6 nm to 50 nm. If the non-magneticconductive layer has a thickness of less than 2.6 nm, thenantiferromagnetic exchange coupling or ferromagnetic exchange couplingbecomes stronger, which is undesirable. If it has a thickness of morethan 50 nm, then the influence of the distribution of the externalmagnetic field cannot be ignored, and the size of the magnetic fieldfelt by the two free magnetic layers may be different. There is noparticular limitation with regard to the material of the non-magneticconductive layer, and it is preferable to use non-magnetic materialsthat are commonly used for conductive electrode materials, such as Cu,Al, TiN, TiWN, CuAl, CuAlTi, Ag, Au or Pt, whose specific resistance is11000 Ωcm or less.

It is preferable that the magneto-resistive element includes four pinnedmagnetic layers, two free magnetic layers, and four intermediate layers,wherein at least one of the free magnetic layers is made of one or moremagnetic layers and one or more non-magnetic layers layered inalternation.

A representative example of the above configuration is firstantiferromagnetic layer/first pinned magnetic layer/first intermediatelayer/first free magnetic layer/second intermediate layer/second pinnedmagnetic layer/second antiferromagnetic layer/third pinned magneticlayer/third intermediate layer/second free magnetic layer/fourthintermediate layer/fourth pinned magnetic layer/third antiferromagneticlayer. If the pinned magnetic layers are made of a magnetic materialwith high coercivity, or if they are made of layered ferrimagneticmaterial, then the antiferromagnetic layers are not always necessary.With this configuration, the total thickness of a TMR element havingfour intermediate layers or a CPP-GMR element can be minimized, so thatit becomes possible to make smaller devices having four intermediatelayers. Furthermore, for TMR elements, the bias dependency can beimproved considerably, and in CPP-GMR elements, the resistance can beincreased. Deteriorating properties due to the demagnetizing field canbe suppressed by making the free magnetic layer a multilayer includingmagnetic and non-magnetic layers. By making the pinned layer amultilayer including magnetic and non-magnetic layers, the magneticnon-symmetry of the free magnetic layers can be improved.

It is also preferable that the magneto-resistive element includes apinned magnetic layer, an intermediate layer and a free magnetic layer,wherein the free magnetic layer is in contact with a buffer layer,wherein the buffer layer is made of a composition that includes 10 wt %to 50 wt % of a non-magnetic element in a magnetic composition incontact with the buffer layer, and wherein the saturation magnetizationof that composition is not more than 0.2 T. If the free magnetic layeris made thinner than 2 nm in order to suppress the demagnetizing field,then the magnetic properties deteriorate because of disturbances of thecrystal structure due to making w the layer thin and interface reactionsduring production. By using, as a buffer layer in contact with the freemagnetic layer, a material in which a non-magnetic element has beenadded to the magnetic material composition constituting the freemagnetic layer, if the buffer layer is used as a primer of the freemagnetic layer for example, then the crystallinity of the free magneticlayer improves, and if it is used above the free magnetic layer, then ithas the effect that the deterioration of the magnetic field due tointerface reactions can be suppressed. The free magnetic layer can be asingle layer, or it can be a multilayer including magnetic andnon-magnetic layers. In the latter case, it is preferable that thebuffer layer contacts the magnetic layer.

It is preferable that the saturation magnetization of the buffer layeris not greater than 0.2 T. With regard to maintaining the crystalstructure of the buffer layer and suppressing the saturationmagnetization, it is also preferable that the non-magnetic element addedto the composition of the magnetic layer accounts for 10 wt % to 50 wt%.

It is also preferable that the buffer layer comprises at least onenon-magnetic element selected from the group consisting of Cr, Mo and W.By forming an alloy with, for example, Fe, Ni, Co, FeNi, FeCo or CoFeNi,these elements are very effective for making the free magnetic layerthin. Of these materials, an alloy NiFeCr with the magnetic materialNiFe is preferable, in particular near the composition (NiFe)₆₁Cr₃₉.

It is also preferable that the free magnetic layer is made of at leastone non-magnetic layer and magnetic layers sandwiching the non-magneticlayer, and that a total film thickness of the magnetic layers is atleast 4 nm. By making the free magnetic layer a multilayer includingmagnetic and non-magnetic layers, it is possible to suppress an increasein the coercivity that is brought about by making the element smaller.If the free magnetic layer is used as a memory device, there is theadvantage that the power consumption drops when memory reversals occurusing a current-generating magnetic field. However, on the other hand,with the thermal stability index as expressed by KuV/kBT (wherein Ku isthe uniaxial anisotropic energy, V is the volume, and kBT is theBoltzman constant and absolute temperature), when Ku (coercivity=2 Ku/M,wherein M is magnetization) is made small, the thermal stability of thestorage becomes poor. However, by increasing the volume V of themagnetic layer included in the multilayered memory (free magneticlayer), the thermal stability can be improved, and it is preferable thatthe total thickness of the magnetic layers is at least 4 nm, morepreferably at least 8 nm.

In the most simple basic configuration of a magneto-resistive element inaccordance with the present invention, a current flows through anintermediate layer that is sandwiched by at least two magnetic layers.Most simply, a layering structure of lower electrode/(primer layer orantiferromagnetic layer)/pinned magnetic layer/intermediate layer/freemagnetic layer is formed by gas-phase film formation on an insulating orconducting substrate. Alternatively, a layering structure of lowerelectrode/(primer layer)/free magnetic layer/intermediate layer/pinnedmagnetic layer/(antiferromagnetic layer) is formed. This multilayer filmis processed into a mesa shape, and after the side walls are coveredwith an inter-layer insulator, an upper electrode is formed. Withcurrent flowing between the lower electrode and the upper electrode, avoltage change is read corresponding to the change of the magnetizationdisplacement angle depending on the magnetization between the magneticlayers.

For the gas-phase film formation for forming the magnetic layers,antiferromagnetic layer, inter-layer insulating layer, electrodes,intermediate layer, etc., it is possible to use any of the PVD methodsordinarily used for thin film formation, such as ion beam deposition(IBD), cluster ion beam deposition, or sputtering methods, such as RF,DC, ECR, helicon, ICP sputtering or sputtering with opposing targets,MBE, or ion plating, or any other suitable method. In particular formaking the interlayer insulating film and the intermediate layer, it isalso possible to use CVD. Furthermore, if the layers are made of anoxide, nitride, carbide or boride, they also can be produced by chemicalbeam epitaxy, gas source MBE, reactive vapor deposition, or reactivesputtering, or it is possible to form them after the gas-phase filmformation by reacting atoms, molecules, ions (plasma), radicals or thelike, controlling partial pressures, reaction temperature and time assuitable. Plasma or radicals can be generated by ECR discharge, glowdischarge, RF discharge, helicon discharge or ICP discharge.

The mesa processing of the magneto-resistive element of the presentinvention can be performed by any process that is ordinarily used formicroprocessing, for example physical or chemical etching, such as ionmilling, RIE, EB, or FIB etching, or photolithography techniques usingsuitable line widths. In order to make the lower electrode flat, it isalso effective to use CMP or cluster ion beam etching to increase theMR.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a vertical current-typemagneto-resistive element in accordance with the present invention.

FIGS. 2A and 2B show the MR curve of Sample 1 of Embodiment 1.

FIGS. 3A and 3B show the MR curve of Sample 2 of Embodiment 1.

FIGS. 4A and 4B show the MR curve of Sample 3 of Embodiment 1.

FIG. 5 shows the magnetization response in the free magnetic layer withrespect to an external magnetic field.

FIG. 6 illustrates the relation between element width and coercivity.

FIG. 7 is a cross-sectional view of a vertical current-typemagneto-resistive element in accordance with the present invention.

FIG. 8 is a cross-sectional view of a vertical current-typemagneto-resistive element in accordance with the present invention.

FIG. 9 is a cross-sectional view of a magnetic sensor in accordance withthe present invention, using a flux guide.

FIG. 10 illustrates the operating principle of the magnetic sensor inaccordance with the present invention, using a flux guide.

FIG. 11 shows the thermal processing properties of the MR.

FIG. 12A illustrates a memory using a vertical current-typemagneto-resistive element in accordance with the present invention, and

FIG. 12B shows the longest width A and the shortest width B of the freemagnetic lalyer.

FIG. 13 is a cross-sectional view of a magnetic sensor in accordancewith the present invention, using a flux guide.

FIGS. 14A and 14B show the MR curve of a free magnetic layer fordifferent film thickness configurations.

FIG. 15 illustrates the operating principle of a non-destructiveread-out magneto-resistive element of the present invention.

FIG. 16 illustrates the operating principle of a non-destructiveread-out magneto-resistive element of the present invention.

FIGS. 17A and 17B illustrate the configuration of a non-destructiveread-out memory of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS WORKING EXAMPLE 1

The following MR elements were produced by magnetron sputtering on athermally oxidized Si substrate. The general configuration of theseelements is shown in FIG. 1.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1)/NiFe(8)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1) /NiFe(4)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1)/NiFe(5)/Ru(0.7)/NiFe(3)/Ta(3)

(The numbers in parentheses indicate the film thicknesses in nm. Thefilm configuration is noted starting at the substrate side. This is alsotrue in the following.)

Here, Ta(3)/Cu(500)/Ta(3) serves as a lower electrode and primer layer103 on a substrate 104, PtMn is an antiferromagnetic layer (not shown),CoFe(3)/Ru(0.7)/CoFe(3) is a pinned magnetic layer 107, Al₂O₃ is theintermediate layer 106, and the rest serves as the free magnetic layer105 (and the last layer Ta(3) as the protective layer).

The parameters for the heat processing were a temperature of 240° C., anelectric field of 5 kOe, and a time of 1.5 h. The multilayer films weremicroprocessed into mesa shape, by photolithography, such that theelement area was a square of 2 to 10 μm per side, and after forming theinterlayer insulator film, the upper electrode 101 was formed, yieldingthe vertical current-type magneto-resistive element. As shown in FIG. 1,the area of the free magnetic layer through which the current flows isslightly smaller than that of the element area of the intermediate layerthrough which the current flows. The MR of the processed element at roomtemperature was measured by DC four-terminal measurement. FIGS. 2 to 4show the MR curves (for 5×5 μm²) of the samples 1 to 3. The RA, whichmeans normalized junction resistance, was in all cases ca. 60 to 70 Ωm².Sample 1 and Sample 2 showed typical spin valve type MR curves, and theMR was 24 and 30%, respectively. On the other hand, in Sample 3, the MRwas about 25%, and a characteristic inflection of the MR value could beobserved near 400 Oe. It seems that in Sample 3, as the externalmagnetic field increases, a spin-flop occurs among the magnetic NiFelayers, and this change can be observed as a change in the magneticresistance. That is to say, it seems that, as in the magnetizationresponse to an external magnetic field in the free magnetic layer shownschematically in FIG. 5, in the Samples 1 and 2, the direction of themagnetization of the free magnetic layer becomes closer to the directionof the external magnetic field as the external magnetic field becomesstronger. On the other hand, in Sample 3, a magnetic layer with largefilm thickness (the magnetic layer on the side of the intermediatelayer) points in the same direction as the external magnetic field, sothat the MR becomes maximal (in this working example, when the upper andlower magnetization directions sandwiching the intermediate layer areantiparallel), but it seems that at ca. 400 Oe, the upper and lowermagnetic layers sandwiching the non-magnetic layer of the free magneticlayer perform a spin flop (see “a” in FIG. 5), so that the antiparallelstate of the magnetizations sandwiching the intermediate layer isbroken, and the MR decreases. After that, the magnetic layers formingthe free magnetic layers tend to align in the same direction as theexternal magnetic field, so that the MR begins to increase again.

Then, from the form of the MR curves of the samples over ±50 Oe, it canbe seen that the coercivity in Sample 1 is large, and its angular shapeis poor. In Sample 2, the coercivity is smallest, and its shape isrelatively good. In Sample 3, the angular shape was the best, and arelatively large coercivity was observed.

FIG. 6 shows the change of the coercivity over the element width for thevarious samples. As the element size in Sample 1 becomes smaller, anincrease in coercivity can be observed, which seems to be caused by thedemagnetizing field. In Sample 3, the increase of the coercivity withrespect to the decrease of the element width is more gentle than inSample 1, and at element sizes below 2×2 μm², it tends to be lower thanin Sample 1. It seems that due to employing a multilayer structure withnon-magnetic layers provided with film thickness differences on magneticlayers, the film thickness of the magnetic layer that is influenced bythe demagnetizing field in practice is about 2 nm. On the other hand, inSample 2, almost no increase of the coercivity with respect to theelement width can be observed. This seems to be the result ofsuppressing the demagnetizing field by magnetostatic coupling of themagnetic fields leaking from the two NiFe layers of the same filmthickness sandwiching the non-magnetic Ta layer.

For Sample 2, the change of the coercivity when changing the thicknessof the non-magnetic Ta layer sandwiched by NiFe was determined. Theelement size was 2×2 μm². It was found that when the Ta thickness is inthe range of 2.6 to 10 nm, a lower coercivity than in Sample 1 wasattained. When Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, SiO₂, SiC, Si₃N₄,Al₂O₃, AlN, Cr₂O₃, Cr₂N, TiO, TiN, TiC HfO₂, HfN, HfC, Ta₂O₅, TaN, TaC,BN and B₄C were examined as non-magnetic layers other than Ta, it wasfound that a similar effect as with Ta can be attained with non-magneticmetals, oxides, nitrides and with carbides.

Then, the thickness of the two NiFe layers sandwiching the Ta wasexamined for Sample 2 at an element size of 2×2 μm². First, when thethickness of the two layers was held equal and that thickness waschanged, a reduction of the coercivity could be ascertained for 1 nm to100 nm. When samples were produced with different thicknesses of the twoNiFe layers sandwiching the Ta in this range of film thickness, it wasobserved that the coercivity tended to increase compared to the sampleswith the same film thickness. The relation between the film thicknessdifference in the magnetic layers was further examined, with thefollowing free magnetic layers

Sample a: NiFe(X)/Ta(3)/NiFe(Y)/Ta(3)/NiFe(Z)

Sample b: NiFe(X)/Ta(3)/CoFe(Y)/Ta(3)/NiFe(Z)

Sample c: NiFe(X)/Ta(3)/NiFe(Y)/Ta(3)/CoFe(Z)

wherein X, Y, and Z were varied over several values. As the result, inSample a, under the condition that the thickness X+Y+Z was constant, alower coercivity was attained when X+Z=Y, and substantially the lowestvalue was attained when further X=Z. In Sample b, under the conditionthat the thickness X+Y+Z was constant, when the saturation magnetizationof the NiFe is Ms1 and the saturation magnetization of the CoFe is Ms2,a low coercivity was attained under the condition that Ms1×(X+Z)=Ms2×Y,and the lowest value was attained when X=Z. Furthermore, in Sample c, alow coercivity was attained when Ms1×X+Ms2×Z=Ms1×Y.

Thus, it can be seen that in the magnetic layers constituting the freemagnetic layer, taking the magnetic layers m arranged at the position m(m=1, 2, . . . ) from the side of the intermediate layer as the magneticlayers m, and taking the product Mm×dm of the average saturationmagnetization Mm of the magnetic layers m and the average layerthickness dm, a magneto-resistive element with low coercivity can beattained when the sum of the products Mm×dm for odd m is substantiallyequal to the sum of the products Mm×dm for even m.

For Sample 3, the change of the coercivity when taking V, Nb, Ta, Cr,Mo, W, Re, Ru, Os, Rh, Ir, Cu, Ag or Au as the non-magnetic layersandwiched by NiFe was examined. The size of the element was set to 2×2μm². As in Sample 3, the thickness of the non-magnetic layer at whichthe value of the coercivity becomes smaller than in Sample 1 has itsminimum in the region lower than ca. 1 nm, such as 0.9 nm for V, 0.95 nmfor Nb, 0.7 nm for Ta, 0.7 nm for Cr, 0.52 nm for Mo, 0.55 nm for W.0.42 nm for Re, 0.8 nm for Ru, 0.4 nm for Ir, and 0.8 nm for Cu. It wasconfirmed that as the thickness of these non-magnetic layers increases,the coercivity increases first to a similar value as in Sample 1, andthen decreases again at 1.5 to 2.6 nm, for example at 1.8 nm for V, 2.5nm for Cr, 1.5 nm for Re, and 2.1 nm for Cu. It should be noted that thelayer thicknesses of the non-magnetic layer have been estimated based onthe film forming speed, so that there may be a certain discrepancy inthe actual film thicknesses. Moreover, even though a decrease of thecoercivity can be observed above 2.6 nm, as in Sample 2, spin flopscould not be observed. The non-magnetic material of the presentembodiment can be a single element, an alloy of several elements, or acompound obtained by reacting a portion of these elements with nitrogen,oxygen, or the like.

Next, in a vertical current-type magneto-resistive element withbasically the same configuration as Sample 3 and Sample 1 and an elementsize of 2×2 μm², the dependency of the magnetic layer on the filmthickness was determined by changing X in the free magnetic layers withthe following configuration:

Sample d: NiFe(2×X)

Sample e: NiFe(5/4×X)/Ru(0.7)/NiFe(3/4×X)

(The numbers in parentheses indicate the NiFe thicknesses in nm.)

As a result, it was confirmed that the coercivity in the configurationof Sample b decreased in the range of 0.5 nm to 100 nm. Above 100 nm,processing the element was difficult, so that no measurement wasperformed for this range, but it seems that the same effects can beexpected.

When the thickness of the two NiFe layers sandwiching the Ru layer wasthe same in this film thickness range, the MR decreased compared to whenthe film thicknesses were different.

The relation between the film thickness difference of the magneticlayers was further examined, with the following free magnetic layers

Sample f: NiFe(X)/Ru(0.7)/NiFe(Y)/Ru(0.7)/NiFe(Z)

Sample g: NiFe(X)/Ru(0.7)/CoFe(Y)/Ru(0.7)/NiFe(Z)

Sample h: NiFe(X)/Ru(0.7)/NiFe(Y)/Ru(0.7)/CoFe(Z)

wherein X, Y, and Z were varied over several values. As a result, it wasfound that in Sample f, under the condition that the thickness X+Y+Z isconstant, the MR became smaller when X+Z=Y, and substantially theminimum is reached when X=Z. In Sample g, under the condition that thethickness X+Y+Z is constant, when Ms1 is the saturation magnetization ofNiFe and Ms2 is the saturation magnetization of CoFe, the MR becamesmaller under the condition that Ms1×(X+Z)=Ms2×Y, and the minimum valuewas attained when X=Z. Furthermore, in Sample h, the minimum value ofthe MR was attained when Ms1×X+Ms2×Z=Ms1×Y.

Thus, it can be seen that in the magnetic layers constituting the freemagnetic layer, taking the magnetic layers arranged at the position m(m=1, 2, . . . ) from the side of the intermediate layer as the magneticlayers m, and taking the product Mm×dm of the average saturationmagnetization Mm of the magnetic layers m and the average layerthickness dm, a magneto-resistive element with high MR can be attainedwith a vertical current-type magneto-resistive element, in which the sumof the products Mm×dm for odd m is substantially equal to the sum of theproducts Mm×dm for even m.

NiFe or CoFe were used for the magnetic layers of the free magneticlayers above, and for the magnetic layers near the intermediate layer ofthe pinned magnetic layers, but the same effect can also be attainedwhen using the magnetic materials mentioned above.

In the above-described working example, Al₂O₃ was used for theintermediate layer, but the same effects can also be attained when usingthe non-magnetic materials mentioned above.

WORKING EXAMPLE 2

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/CoFe(32)/Al₂O₃(X)/CoFe(3)/Ru(0.7)/CoFe(3)/PtMn(20)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/(CoFe(4)/Ta(3)/CoFe(4))*4/Al₂O₃(X)/Fe(3)/Ru(0.7)/CoFe(3)/PtMn(20)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/(CoFe(3)/Ru(0.7)/CoFe(5))*4/Al₂O₃(X)/CoFe(3)/Ru(0.7)/CoFe (3)/PtMn(20)/Ta(3)

Here, (CoFe(4)/Ta(3)/CoFe(4))*4 means that the layers(CoFe(4)/Ta(3)/CoFe(4)) are produced four times in repetition.

The multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×5, 10×25, 20×50, and 40×100 μm²,and after forming an inter-layer insulator film, an upper electrode wasformed, yielding vertical current-type magneto-resistive elements withthe cross section shown in FIG. 7 and FIG. 8. In these elements, thefree magnetic layer 105 is arranged on the substrate side, differentfrom FIG. 1. The film thickness X of the Al₂O₃ serving as theintermediate layer of the Samples 1 to 3 was adjusted so that for therespective element areas a value of ca. 100Ω was measured. Theparameters for the microprocessing were a temperature of 300° C., amagnetic field of 5 kOe, and a time of 1.5 h.

Then, the coercivity and the MR of the Samples 1 to 3 that have beenmicroprocessed to the shape of FIG. 7 were compared. The results areshown in Table 1. In the samples, in which the element area was in therange of 2×5 to 20×50 μm², the Samples 2 and 3 had a lower coercivityand a higher MR than Sample 1. On the other hand, it can be seen that atan element area of 40×100 μm², even though the MR of Sample 2 and 3 ishigh, the coercivity of Sample 3 is higher than that of Sample 2.

TABLE 1 Sample 1 Sample 2 Sample 3 MR(%)/ MR(%)/ MR(%)/ Element shapecoercivity(Oe) coercivity(Oe) coercivity(Oe) 2 × 5 39/49 46/40 46/3 10 ×25 40/18 46/16 47/3 20 × 50 41/15 48/15 49/2  40 × 100 37/9  45/10 45/3

When the same samples were microprocessed into the shape shown in FIG. 8and the area of the free magnetic layer was larger than the elementarea, the MR was increased by 1 to 2% each, and the angular shape of thehysteresis was improved.

WORKING EXAMPLE 3

The following sample was produced by magnetron sputtering on a thermallyoxidized Si substrate.

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1.5)/CoFe(d1)/Ru(0.7)/NiFe(d2)/Ta(3)

Multilayer films with this configuration were microprocessed usingphotolithography into mesa shapes with an element area of 2×2 μm, andafter forming an inter-layer insulator film, an upper electrode wasformed, yielding a vertical current-type magneto-resistive element withthe cross section shown in FIG. 1. The parameters for the thermalprocessing were a temperature of 260° C., a magnetic field of 5 kOe, anda time of 1.5 h. Then, the MR when applying magnetic fields of ±200 Oeto the resulting element was measured, and the change of the MR in arelatively small external magnetic field was examined. The results areshown in Table 2. With the saturation magnetization M1 of CoFe being2.15 T and the saturation magnetization M2 of NiFe being 1 T, CoFe hasthe higher spin polarizability in this composition. Furthermore, “Nm”listed in Table 2 is the demagnetizing factor determined in the filmplane in the direction of the applied magnetic field, determined bycalculating the effective film thickness d22=(M2×d2−M1×d1)/M2 respondingto the external magnetic field. S is the absolute value of M1×d1−M2×d2.

TABLE 2 d1 d2 (M1 × d1 + (M2 × d2 − M1 × d1)/ MR (nm) (nm) M2 × d2)/S M2Nm (%) 2 4.5 44 0.2 0.00008 40 2 4.8 18.2 0.5 0.0002 46 2 5 13.285714290.7 0.003 47 2 10 2.50877193 5.7 0.004 49 2 20 1.547770701 15.7 0.008 432 30 1.33463035 25.7 0.012 41 2 50 1.188183807 45.7 0.019 40 2 1001.089864159 95.7 0.036 30

From Table 2, it can be seen that a high MR can be attained when(M1×d1+M2×d2)/S is larger than 1.1 and smaller than 20, and Nm issmaller than 0.02. It seems that when Nm is large, the magnetic domainsare disturbed and MR decreases, and when (M1×d1+M2×d2)/S is large, theinfluence of the antiferromagnetic coupling is strong, so that thecoercivity increases, and the magnetization rotation becomes difficult.

Furthermore, in this working example, Ni₈₁Fe₁₉ was used as the softmagnetic material, and FeCo was used as a high spin polarizationmaterial, but a similar effect also can be attained when using thematerials mentioned above.

WORKING EXAMPLE 4

A flux guide-type sensor as shown in FIG. 9 was produced. Ta serving asboth a primer layer and a magnetic separation layer 202,PtMn(20)/CoFe(3)/Ru(0.7)/CoFe(3) serving as a pinned magnetic layer 207,Al₂O₃ serving as an intermediate layer 206, CoFe(1)/NiFe(4) serving as afirst magnetic layer 205 and Ta(2) serving as a protective layer wereformed on a lower shield 201 made of a NiFe plating, microprocessed intomesa shape, and after forming an inter-layer insulator film 203, the Tawas eliminated by ECR etching. Subsequently, after forming a flux guide210 made of NiFe(10) serving as a second magnetic layer, Ru(0.7)/CoFe(2)serving as non-magnetic layer/third magnetic layer 215, Al₂O₃ serving asan intermediate layer 216, CoFe(3)/Ru(0.7)/CoFe(3)/(PtMn(20) serving asa pinned magnetic layer 217, and a protective film were formed. Then,after mesa-processing while leaving the flux guide, an inter-layerinsulating film 213 was formed, providing a magnetic separation layer212 and an upper shield 211.

The configuration of the multilayer film was thus as follows:

lower shield 201/magnetic separation layer 202/PtMn(20)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1.7)/CoFe(1)/NiFe(4)/NiFe(10)/Ru(0.7)/CoFe(2)/Al₂O₃(1.7)/CoFe(3)/Ru(0.7)/CoFe(3)/PtMn(20)/magnetic separationlayer 212/upper shield 211

Then, by thermally processing this sensor at 260° C. in a magneticfield, the magnetization of the pinned magnetic layer 207 and the pinnedmagnetic layer 217 were fixed to the same direction. The magnetic layer205 and the magnetic layer 210 are ferromagnetically coupled, whereasthe magnetic layer 210 and the magnetic layer 215 areantiferromagnetically coupled. Consequently, the magnetization directionof the magnetic layers sandwiching the non-magnetic layer showsdifferent polarities with respect to an external magnetic fieldintroduced through the flux guide. A current flows from the upperelectrode (upper shield) to the lower electrode (lower shield), and whenthe potential between the lower electrode (lower shield) and the fluxguide is V1, and the potential between the flux guide and the upperelectrode (upper shield) is V2, then the a sensor output with a high S/Nratio was attained by taking the difference of the potentials, as shownin FIG. 10. Here, β means amplification factor.

In this working example, it was also possible to attain a high S/N withan MRAM in which the free magnetic layer served as the memory.

WORKING EXAMPLE 5

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/(CoFe(3)/Ru(0.7)/CoFe(3))/Al₂O₃(X)/CoFe(1)/NiFe(4)/Ta(3)/NiFe(6)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/(CoFe(3)/Ru(0.7)/CoFe(3))*10/Al₂O₃(X)/CoFe(1)/NiFe(4)/Ta(3)/NiFe(6)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/(CoFe(2)/Ru(0.7)/CoFe(3))*10/Al₂O₃(X)/CoFe(1)/N iFe(4)/Ta(3)/NiFe (6)/Ta(3)

Here, (CoFe(Y)/Ru(0.7)/CoFe(Y))*10 means that the layers(CoFe(Y)/Ru(0.7)/CoFe(Y)) are produced ten times in repetition.Furthermore, CoFe with a saturation magnetization of 2 T and NiFe with asaturation magnetization of 1 T was used.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×5, 10×25, 20×50, and 40×100 μm²,and after forming an inter-layer insulator film, an upper electrode wasformed, yielding vertical current-type magneto-resistive elements withthe cross section shown in FIG. 1. The film thickness X of the Al₂O₃serving as the intermediate layer of the Samples 1 to 3 was adjusted sothat in the element areas a value of ca. 100 Ω was measured. After themicroprocessing, a thermal process at a temperature of 330° C. and amagnetic field of 5 kOe was performed for 1.5 hours.

Table 3 shows the respective results of the MR measured at ±500 Oe.

TABLE 3 Element shape Sample 1 Sample 2 Sample 3 (μm) MR(%) MR(%) MR(%)2 × 5 25 30 18 10 × 25 27 32 18 20 × 50 26 31 22  40 × 100 17 22 10

Samples 1 and 2 exhibited an MR typical for spin valves, even without anantiferromagnetic material, whereas Sample 3 exhibited MR properties ofthe coercivity difference type. In the samples with an element area of40×100 μm, the decrease of MR was large for all Samples 1 to 3. It seemsthat as the element area increases and exceeds 1000 μm², multipleorientations of the magnetic domains in the pinned magnetic layer becomeapparent. Also, for all element shapes, Sample 1 and Sample 2 showed ahigher MR than Sample 3. It seems that the decrease of the MR in Sample3 is due to the generation of a magnetic field leaking from the(CoFe(2)/Ru(0.7)/CoFe(3))*10 layers serving as the pinned magneticlayer, and the generation of disturbances in the domains of theCoFe(1)/NiFe(4)/Ta(3)/NiFe layer serving as the free magnetic layer.Furthermore, it seems that the MR of Sample 2 is higher than that ofSample 1, because the number of non-magnetic and magnetic layers islarger, so that they function as stable pinned magnetic layers.

Thus, it can be seen that in the magnetic layers constituting the pinnedmagnetic layer, taking the magnetic layers arranged at the position m(m=1, 2, . . . ) from the side of the intermediate layer as the magneticlayers m, and taking the product Mm×dm of the average saturationmagnetization Mm of the magnetic layers m and the average layerthickness dm, a high MR can be attained when the sum of the productsMm×dm for odd m is substantially equal to the sum of the products Mm×dmfor even m.

Then, the change of the MR when taking V, Nb, Ta, Cr, Mo, W, Re, Ru, Os,Rh, Ir, Cu, Ag or Au as the non-magnetic layer sandwiched by CoFe wasexamined for Sample 2. The thermal process temperature was set to 200 to450° C., and the size of the element was set to 2×2 μm². As in Sample 2,the thickness of the non-magnetic layer attaining a high MR was in therange of 0.3 nm to 2.6 nm. Furthermore, as the thermal processtemperature increased, the MR decreased considerably, especially insamples with a film thickness of 0.6 nm or less. It could be confirmedthat the same effect also occurs when an alloy of the above metalelements, or an alloy or compound containing at least 50 wt % of thesemetal elements is used for the non-magnetic material.

Furthermore, a high MR could be realized when the thickness of themagnetic layer was 0.3 nm to 10 nm.

WORKING EXAMPLE 6

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(X)/CoFe(1)/NiFe(4)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/CoFe(3)/Ru(0.7)/Al₂O₃(0.25)/CoFe(3)/Al₂O₃(X)/CoFe(1)/NiFe(4)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/CoFe(3)/Ru(0.35)/Al₂O₃(0.25)/Ru(0.35)/CoFe(3)/Al₂O₃(X)/CoFe(1)/NiFe(4)/Ta(3)

Sample 4

Ta(3)/Cu(500)/Ta(3)/CoFe(3)/RuAlO(0.8)/Ru(0.35)/CoFe(3)/Al₂O₃(X)/CoFe(1)/NiFe(4)/Ta(3)

Here, CoFe with a saturation magnetization of 2.2 T and NiFe with asaturation magnetization of 1 T was used.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×2 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. The film thickness X of the Al₂O₃ serving as theintermediate layer of the Samples 1 to 4 was adjusted so that the RA inthe element areas was about 100 Ωμm².

After the microprocessing, thermal processes at a temperature of 300° C.and 400° C., and a magnetic field of 5 kOe were performed for 1.5 hours.

Table 3 shows the respective results of the MR measured at ±500 Oe.

TABLE 4 Temperature Sample 1 Sample 2 Sample 3 Sample 4 ° C. MR(%) MR(%)MR(%) MR(%) 300 48 43 35 30 400 2 15 13 11

As shown in Table 4, although Sample 1, which used Ru as thenon-magnetic layer of the pinned magnetic layer, exhibited the highestMR for thermal processing 300° C., its MR after thermal processing at400° C. was the lowest. It seems that this is, because compared to theother samples, the deterioration of the pinning magnetic field islargest, so that the layering structure of the CoFe magnetic layer andthe Ru layer was disturbed by the thermal process, or they diffused intoone another. In the other samples, the pinning magnetic field was strongalso after the thermal processing at 400° C. It also seems possible thatinadequate oxidation conditions of the Al₂O₃ serving as the intermediatelayer in the samples of this working example are responsible for thedecrease of the MR at 400° C. for Samples 2 to 4.

From further tests, it was found that the thermal resistance improveswhen using a multiple layer structure of at least two layers X/R of ametal X (X═Cu, Ag, Au, Ru, Rh, Ir, Re, Os) and an R selected fromoxides, nitrides, carbides and borides (R═SiO2, SiC, Si₃N₄, Al₂O₃, AlN,Cr₂O₃, Cr₂N, TiO, TiN, TiC, HfO₂, HfN, HfC, Ta₂O₅, TaN, TaC, BN, B₄C. ormixtures of the above), or mixtures of X and oxides R.

WORKING EXAMPLE 7

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate in a uniaxial magnetic field.

Sample 1

Ta(3)/Cu(500)/X(3)/CoFe(3)/Ru(0.7)/CoFe(3)/Fe₃O₄(0.25)/Al₂O₃(X)/Fe₃O₄(0.25)/NiFe(4)/Ta(3)

Sample 2

Ta(3)/Cu(500)/X(3)/Co(3)/Ru(0.7)/Co(3)/Fe₃O₄(0.25)/Al₂O₃(X)/Fe₃O₄NiFe(4)/Ta(3)

(The numbers in parentheses indicate the film thicknesses in nm)

Here, X is one selected from Hf(bcc), Nb(bcc), Ta(bcc), Ru(hcp),Pt(fcc), Cu(fcc), and the composition of CoFe is determined as CoFehaving a bcc structure.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×2 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. The film thickness X of the Al₂O₃ serving as theintermediate layer of the Samples 1 and 2 was adjusted so that the RA inthe element areas was about 100Ω. The results of the measurement of theMR after the film formation are shown in Table 5.

TABLE 5 Sample 1 bcc Sample 2 hcp X Crystal structure MR(%) MR(%) Mn bcc3 2 Ag fcc 3 5 Hf bcc 15 10 Ta bcc 15 11 Nb bcc 13 8 Cr bcc 15 16 Ru hcp7 13 Pt fcc 7 14 Cu fcc 8 21

As the result from other tests, it was found that if the pinned magneticlayer is a multilayer film of magnetic and non-magnetic layers, thenstrong antiferromagnetic coupling is generated directly after the filmformation even when using no antiferromagnetic material, by selecting atleast one element from the group consisting of IVa to VIa and VIIIelements and Cu as the primer layer. Furthermore, it was confirmed thatwhen using these primers, up to high temperatures the deterioration ofthe MR was smaller than when using an antiferromagnetic material such asFeMn. In particular, it was confirmed that when the primer layer and theadjacent magnetic layer have at least one crystal structure selectedfrom fcc and hcp structures, or when both are of bcc structure, theantiferromagnetic coupling between the magnetic layers in the pinnedlayer was strengthened and a high MR can be attained. Furthermore,comparing the MR after thermal processing in a magnetic field at 300 to450° C. of these samples to that of samples using FeMn or IrMn insteadof the primer layer, it was found that the MR of vertical magneticresistance effect elements using the primer layer of the present workingexample was higher.

WORKING EXAMPLE 8

The following sample was produced by magnetron sputtering on a thermallyoxidized Si substrate in a uniaxial magnetic field.

Ta(3)/Cu(500)/Ta(3)/X(30)/CoFe(3)/Al₂O₃(1)/NiFe(4)/Ta(3)/NiFe(4)/Ta(3)Here, X is a Cr-based antiferromagnetic material or a Mn-basedantiferromagnetic material.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×2 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. The results of the measurement of the MR after thermalprocessing at 350° C. in a magnetic field is shown in Table 6.

The table also lists the composition ratio of the examined compositions.

TABLE 6 Antiferromagnetic material MR(%) *IrMn 6 *FeMn 7 Cr₈₀Mn₂₀ 25Cr₅₀Mn₅₀ 27 CrTc 10 *Cr_(99.5)Ru_(0.5) 3 Cr₉₉Ru₁ 20 Cr₉₅Ru₅ 25 Cr₈₀Ru₂₀24 *Cr₇₅Ru₂₅ 2 *Cr_(99.5)Rh_(0.5) 4 Cr₉₉Rh₁ 23 Cr₉₀Rh₁₀ 27 Cr₈₀Rh₂₀ 25*Cr₇₅Rh₂₅ 7 *Cr_(99.5)Re_(0.5) 6 Cr₉₉Re₁ 14 Cr₉₀Re₁₀ 25 Cr₈₀Re₂₀ 17*Cr₇₅Re₂₅ 5 CrOs 12 CrIr 19 Cr₅₀Pd₅₀ 12 CrPt 13 CrAg 11 Cr₅₀Au₅₀ 19Cr₉₅Al₅ 13 Cr₇₆Al₂₄ 22 Cr₇₀Al₃₀ 20 CrPtRu 18 CrPdRu 17 CrPtRe 16 CrPdRe18 CrPtRh 15 CrPdRh 13 *not preferable examples

As shown in Table 6, excellent thermal resistance was attained when theantiferromagnetic layer is an alloy of Cr and at least one selected fromMn, Tc, Ru, Rh, Re, Os, Ir, Pd, Pt, Ag, Au and Al. Furthermore, infurther tests it was found that a similar effect also can be attainedwhen these alloys include not more than 10 at % of additional elementsbesides the aforementioned ones.

WORKING EXAMPLE 9

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate in a uniaxial magnetic field.

Sample 1

Ta(3)/Cu(500)/Ta(3)/X(30)/CoFe(3)/Al₂O₃(1)/NiFe(4)/Ta(3)/NiFe(4)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/NiFeCr(2)/X(30)/CoFe(3)/Al₂O₃(1)/NiFe(4)/Ta(3)/NiFe(4)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/NiFeCr(2)/X(30)/Co(2)/CoFe(1)/Al₂O₃(1)/NiFe(4)/Ta(3)/NiFe(4)/Ta(3)

Here, X is a Mn-based antiferromagnetic material.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×2 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. The results of the measurement of the MR after thethermal processing at 350° C. in a magnetic field of 5 kOe are shown inTable 7.

The table also lists the composition ratio of the examined compositions.

TABLE 7 Antiferromagnetic Sample 1 Sample 2 Sample material MR(%) MR(%)MR(%) *IrMn 6 7 9 *FeMn 7 8 10 *Pt₃₅Mn₆₅ 1 1 1 Pt₄₀Mn₆₀ 18 24 25Pt₄₈Mn₅₂ 26 29 31 Pt₅₅Mn₄₅ 17 19 22 *Pt₆₀Mn₄₀ 2 2 2 *Pd₃₅Mn₆₅ 1 1 1Pd₄₀Mn₆₀ 11 14 15 Pd₅₀Mn₅₀ 16 18 20 Pd₅₅Mn₄₅ 12 15 16 *Pd₆₀Mn₄₀ 1 1 1*(PtPd)₃₅Mn₆₅ 1 1 1 (PtPd)₄₀Mn₆₀ 15 17 21 (PtPd)Mn 23 26 29 (PtPd)Mn 1618 20 *(PtPd)Mn 1 1 1 *not preferable examples

Table 7 shows that with Mn-based antiferromagnetic material including Ptor Pd, a resistance against thermal processing at 350° C. that is largerthan that of IrMn and FeMn can be attained in a certain range ofcompositions. When the magnetization curves of the samples of thisworking examples were examined by VSM, it was found that after thermalprocessing at 450° C., the pinning magnetic field increased further fromprocessing at 350° C., and hardly any reduction of the saturationmagnetization of the pinned magnetic layer could be observed. On theother hand, the saturation magnetization of the pinned magnetic layerafter thermal processing at 450° C. decreased considerably in elementsusing IrMn and FeMn, and it seems that the pinning magnetic field islost and mutual diffusion occurred.

In Sample 2, which used NiFeCr for the primer of Sample 1, the thermalresistance was further improved. A similar effect could be confirmedwith a primer layer having an fcc structure of NiFe, Cu or the like, oran hcp or hct structure. Moreover, as the result of an X-ray diffractionanalysis, it was found that by providing a primer as in the presentworking example, the (111) plane orientation of the antiferromagneticfilm was strengthened. It also was found that in the Cr-basedantiferromagnetic film of the previously explained Working Example 8,when the primer layer had a bcc structure, the thermal resistance wasimproved further.

It can be seen that by providing a Co layer as the antiferromagneticmaterial, as in Sample 3, the thermal resistance is improved evenfurther. This seems to be due to the fact that with Co, mutual diffusiontends to occur less easily than with CoFe.

The above shows that the thermal resistance is preferable when theantiferromagnetic layer is given by the composition formulaMn_(100-x)Me_(x) (wherein Me is at least one of Pd and Pt), and X is inthe range of 40≦X≦55 (in atomic weight %). This seems to be because alarger amount of noble metals is included compared to IrMn and FeMn. Inother tests, an excellent thermal resistance was also found when theMnMe composition contained not more than 10 at % of Tc, Ru, Rh, Re, Os,Ir, Pd, Pt, Ag, Au and Al.

The thermal resistance is improved when an antiferromagnetic layer isformed on the primer layer, and the primer layer and theantiferromagnetic layer have at least one crystal structure selectedfrom fcc and hcp structure, or the primer layer and theantiferromagnetic layer both have bcc structure. This seems to be due tothe fact that the crystal growth of the antiferromagnetic material ispromoted by the primer layer, and distortions are reduced, thussuppressing the diffusion of elements constituting the antiferromagneticlayer.

The thermal pressing resistance is particularly large when at least themagnetic layer in contact with the antiferromagnetic layer is Co.

WORKING EXAMPLE 10

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/X(0.5)/CoFe(3)/Al₂O₃(1)/CoFe(3)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(1.5)/X(0.5)/CoFe(1.5)/Al₂O₃(1)/CoFe(3)/Ta(3)

Here, X is a ferromagnetic material constituting a portion of the pinnedmagnetic layer.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×2 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. The results of the measurement of the MR after thethermal processing at 350° C. in a magnetic field are shown in Table 8.

The table also lists the composition ratio of the examined compositions.

TABLE 8 Antiferromagnetic Sample 1 Sample 2 material MR(%) MR(%) *CoFe23 23 Fe₃O₄ 30 34 MnZn ferrite 32 33 FeAlO 36 38 FeTaN 32 34 FeHfN 32 35FeTaC 33 36 FeHfC 33 36 CoFeB 37 38 CoTaZr 38 40 CoTaNb 33 35 *notpreferable example

From Table 8, it can be seen that the thermal resistance can be improvedconsiderably by using for at least a portion of the magnetic layer incontact with at least one of the antiferromagnetic layer or thenon-magnetic layer a ferromagnetic material including at least oneelement selected from oxygen, nitrogen and carbon.

This seems to be due to the fact that a deterioration of the MR based oninter-layer diffusion during the thermal processing can be suppressedwhen at least a portion of the magnetic layer is made of a relativelythermally stable material such as an oxide, nitride or carbide. In thisworking example, the magnetic layer can be of (i) a three-layerstructure of metal ferromagnetic material/ferromagnetic materialincluding oxygen, nitrogen or carbon/metal ferromagnetic material, (ii)a two-layer structure of ferromagnetic material including oxygen,nitrogen or carbon/metal ferromagnetic material, or (iii) the magneticlayer can be made entirely of a ferromagnetic material including oxygen,nitrogen or carbon.

It was confirmed that it is also effective when, besides the Fe₃O₄ andMnZn ferrite of this working example, spinel oxides for which ferritematerials such as NiZn ferrite are typical examples, garnet oxides, orperovskite oxides are used for the oxygen-containing ferromagneticmaterial. Furthermore, a similar effect could be confirmed with an oxideferromagnetic material of TMO (with T=Fe, Co, Ni, and M=Al, Si, Ti, Zr,Hf, V, Nb, Ta, Cr, Mg), such as FeAlO in this working example.Furthermore, besides the FeTaN and the FeHfN of this working example, asimilar effect could also be confirmed with a nitride ferromagneticmaterial of TN or TMN (with T and M as above) as the nitrogen-containingferromagnetic material, or, besides the FeTaC or FeHfC of this workingexample, with TMC (with T and M as above) as the carbide ferromagneticmaterial.

Moreover, inter-layer diffusion during the thermal processing can besuppressed when at least a portion of the magnetic layer is made of anamorphous ferromagnetic material. There is no particular limitation tothe amorphous material, and the effect of increasing thermal resistancecould be confirmed with Co(Fe)NbZr, Co(Fe)TaZr, CoFeB Co(Fe)Ti,Co(Fe)Zr, Co(Fe)Nb, Co(Fe)MoBZr, Co(Fe)VZr, Co(Fe)MoSiZr, Co(Fe)MoZr,Co(Fe)MoVZr, Co(Fe)MnB, among others.

WORKING EXAMPLE 11

The following element was produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(da)/CoFe(df)/Al₂O₃(Y)/CoFe(1)/NiFe(5)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 100 Ωμm of RAwas measured. Multilayer films obtained for various df and da weremicroprocessed using photolithography into mesa shapes with an elementarea of 2×2 μm², and after forming an inter-layer insulator film, anupper electrode was formed, yielding vertical current-typemagneto-resistive elements with the cross section shown in FIG. 1. Theresults of the MR after the thermal processing at 350° C. in a magneticable 9.

TABLE 9 df da Sample 1 (nm) (nm) df/da MR(%) *1 *3 0.33 6 *2 *3 0.66 810 *3 3.3 7 50 *3 *17 6 *60 *3 *20 3 *1 5 0.2 9 2 5 0.4 18 10 5 2 13 505 *10 7 *60 5 *12 5 *1 10 0.1 9 2 10 0.2 24 10 10 1 32 50 10 5 21 *60 10*6 9 *1 20 *0.03 8 2 20 0.1 23 10 20 0.5 29 50 20 2.5 19 *60 20 3 8 *1100 *0.01 2 2 100 *0.02 4 10 100 0.1 17 50 100 0.5 21 *60 100 0.6 9 1*200 *0.005 1 2 *200 *0.01 3 10 *200 *0.05 6 50 *200 0.25 9 *60 *200 0.37 *not preferable example

processing the samples before the microprocessing step at 260° C., 350°C., 400° C. and 450° C. in a magnetic field, their magnetization curveswere examined by VSM. On the whole, it was found that the thicker thepinned magnetic layer and the thinner the antiferromagnetic layer, thepinning magnetic field after the thermal processing tends to be strongerand the structure of the magnetic material tends to be better preserved,but when the antiferromagnetic material is too thin, the pinningmagnetic field tends to be decreased. Also, when the magnetic layer istoo thick, a decrease of the stationary field could be observed.Although an increase of the coercivity that seems to be caused bythermal stress or disturbances at the interfaces of the intermediatelayers was observed as the thermal processing temperature was increased,the pinning magnetic field itself became stronger, and it became clearthat the effect of an increase in the pinning magnetic field of theantiferromagnetic layer was achieved using a high-temperature processwith a thermal processing temperature of 350° C. to 400° C. This alsocan be confirmed in the MR curves.

As an example, FIG. 11 shows the MR curves when the thermal processingwas carried out at 260° C. and at 400° C.

In this example, the sample was of the following form:

Ta(3)/Cu(500)/Ta(3)/PtMn(300)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 100 Ωμm of RAwas measured.

A decrease of the MR could not be observed, possibly because theintermediate layer was not optimized or because of dispersion due to therelatively low ratio (0.1) of FeCo(3)/PtMn(30), but a clear increase ofthe pinning magnetic field was observed after thermal processing at 400°C.

In this working example, the best sample had an MR of at least 15% evenafter thermal processing at 450° C. Since the MR also depends on thecondition of the intermediate layer, it can be seen that an excellentthermal resistance is attained substantially within the range of thisworking example, that is, in the ranges

2 nm≦df≦50 nm, 5 nm≦da≦100 nm, and 0.1≦df/da≦5,

wherein df is the layer thickness of the pinned magnetic layer and da isthe thickness of the antiferromagnetic material.

Furthermore, PtMn was used for the antiferromagnetic material in thisworking example, but it could be confirmed that the range in whichthermal stability is attained from 350° C. to 450° C. is substantiallythe same also for other ferromagnetic materials.

WORKING EXAMPLE 12

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(20)/CoFe(6)/Al₂O₃(1.8)/CoFe(1)/NiFe(5)/Ta(3)

Sample 2

Ta(3)/(Cu(250)/Ta(3))*2/PtMn(20)/CoFe(6)/Al₂O₃(1.8)/CoFe(1)/NiFe(5)/Ta(3)

Sample 3

Ta(3)/(Cu(50)/Ta(3))*10/PtMn(20)/CoFe(6)/Al₂O₃(1.8)/CoFe(1)/NiFe(5)/Ta(3)

Furthermore, (Cu(50)/Ta(3))*10 means that the layers (Cu(50)/Ta(3)) areproduced ten times in repetition.

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×2 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. Table 10 shows the MR after thermal processing at 300°C., 350° C., 400° C. and 450° C. in a magnetic field.

TABLE 10 Thermal process temperature Sample 1 Sample 2 Sample 3 ° C.MR(%) MR(%) MR(%) 300 45 46 47 350 25 32 37 400 12 20 25 450 8 15 20

From Table 10, it can be seen that with thermal processing at 300° C.,the MR of the Samples 1 to 3 are all substantially the same, and as thethermal processing temperature increases, the deterioration of the MR issmaller when the primer electrode is multilayered, as in Sample 2 andSample 3.

Regarding the increase of the thermal processing properties when thelower electrode was multilayered like this, a similar effect could beconfirmed, other than with the combination of Cu and Ta, with multilayerfilms of a highly conductive metal film having at least one selectedfrom Ag, Au, Al and Cu as the main component, and a grain-growthsuppression layer of a material having at least one selected from groupsIVa to VIa and VIII as the main component, or of one selected from aconductive oxide, a conductive nitride and a conductive carbide. Thesemultilayer electrodes seem to suppress the grain growth in theelectrodes due to thermal processing, and function so as to decreasedisturbances in the layering structure, so that the thermal resistanceis increased. With regard to the suppression of grain growth, it ispreferable that the thickness of the highly conductive metal layer isca. 5 nm to 100 nm, and that of the grain-growth suppression layer is0.7 nm to 5 nm.

The above Working Examples 1 to 12 were described with elements usingthe tunneling magnetic resistance effect. This tunneling magneticresistance effect occurs when the intermediate layer is an insulator ora semiconductor including at least one element selected from oxygen,nitrogen, carbon and boron, and more specifically, this effect can beconfirmed with oxides, nitrides, carbides, borides or semiconductors,such as SiO₂, SiC, Si₃N₄, Al₂O₃, AlN, Cr₂O₃, TiC, HfO₂, HfN, HfC, Ta₂O₅,TaN, TaC, BN, B₄C., DLC or C₆₀. Furthermore, when not more than 20 at %of such elements as Cu, Ag, Au, Pt, Pd, Rh, RhIr and Ru are included inthe intermediate layer, a similar effect is attained if the resistanceis sufficiently high. The intermediate layer can be of a multilayerstructure of insulator and conductor, or of a structure in which aconducting element is covered with an insulator.

In the following examples, the intermediate layer is a non-insulator,and the magnetic resistance effect is due to the GMR effect.

WORKING EXAMPLE 13

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(10)/Co(3)/Ru(0.7)/Co(3)/Cu(2.2)/Co(1)/NiFe(2)/Pt(7)/Ta(10)

Sample 2

Ta(3)/Cu(500)/Ta(3)/PtMn(10)/Co(3)/Ru(0.7)/Co(3)/Cu(2.2)/Co(1)/NiFe(2)/Ta(3)/NiFe(4)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/PtMn(10)/Co(3)/Ru(0.7)/Co(3)/Cu(2.2)/Al₂O₃(0.3)/Co(1)/NiFe(2)/Ta(3)/NiFe(4)/Ta(3)

Sample 4

Ta(3)/Cu(500)/Ta(3)/PtMn(10)/Co(3)/Ru(0.7)/Co(3)/Cu(1.1)/Al₂O₃(0.3)/Co(1.1)/Co(1)/NiFe(2)/Ta(3)/NiFe(4)/Ta(3)

Sample 5

Ta(3)/Cu(500)/Ta(3)/PtMn(10)/Co(3)/Ru(0.7)/Co(3)/CuAlO(2.2)/CoFe(1)/NiFe(2)/Ta(3)/NiFe(4)/Ta(3)

Sample 6

Ta(3)/Cu(500)/Ta(3)/PtMn(10)/FeN(3)/Cr(0.7)/FeN(2)/CoFeB(1)/CuAlO(2.2)/CoFeB(1)/NiFe(2)/Ta(3)/NiFe(4)/Ta(3)

These multilayer films were microprocessed using EB lithography intomesa shapes with an element area of 0.1×0.1 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1. It should be noted that all microprocessed elements hadthe same thickness.

Table 11 shows the MR and the resistance after thermal processing in amagnetic field.

TABLE 11 Resistance Sample (Ω) MR(%) 1 0.6 2 2 0.5 10 3 1 12 4 1.1 15 50.8 12 6 1.5 8

In Sample 1 and Sample 2, the free magnetic layer is configuredaccording to the present invention, so that an increase of the MR can beobserved. This seems to be because the domain structure changes due tothe free magnetic layer of the present invention, and the demagnetizingfield that has been increased by the miniaturization is decreased.Furthermore, by providing a multilayer film of non-magnetic material(which is highly resistant) and transition metals, as in Sample 3 andSample 4, the resistance is increased, and the MR is improved. A similareffect can be observed with compounds of highly resistant non-magneticmaterials and transition elements, as in Sample 5. Furthermore, it canbe seen that when the magnetic layer is a highly resistant nitride oramorphous ferromagnetic material, as in Sample 6, the resistanceincreases, even though the MR drops slightly.

Thus, it can be seen that a vertical current-type magneto-resistiveelement utilizing the GMR effect and having high MR and high resistancecan be produced, when the intermediate layer is made of at least oneelement selected from the transition elements, or of at least onecompound conducting material selected from compounds of a transitionelement and oxygen, nitrogen or carbon, and when the element area is notmore than 0.01 μm².

The element area should be not more than 0.01 μm², in order to increasethe element resistance, and the problem of deterioration of thecoercivity due to miniaturization can be solved with themagneto-resistive element of the present invention.

A similar effect is also attained, when the intermediate layer is atransition metal other than the Cu of this working example, and inparticular when it is at least one selected from V, Nb, Ta, Cr, Mo, W,Cu, Ag, Au, Ru, Rh, Ir, Re, and Os.

It was confirmed that an increase of the element resistance or thethermal resistance is attained when using, as in the RuAlO compound ormultilayer films of Ru/Al₂O₃/Ru or Ru/Al₂O₃ a conductive compound ofthese elements, oxidized, nitrided or carbided to an extent at whichtheir conductivity is not lost; or an oxide, nitride, carbide or boridecompound XR of an R (R═SiO₂, SiC, Si₃N₄, Al₂O₃, AlN, Cr₂O₃, Cr₂N, TiO,TiN, TiC, HfO₂, HfN, HfC, Ta₂O₅, TaN, TaC, BN, B₄C. or composites of theabove) with the above-mentioned transition metals X; or a two-layermultilayer film of X/R.

Furthermore, the element resistance of the vertical current-typemagneto-resistive element due to the CPP-GMR effect can be increasedwhen for the magnetic material sandwiching the intermediate layer, atleast a portion of at least one magnetic layer is made of aferromagnetic material including oxygen, nitrogen or carbon, or of anamorphous ferromagnetic material. More specifically, a similar effectcould be observed with spinel oxides for which ferrite materials such asFe₃O₄, MnZn ferrite and NiZn ferrite are typical examples, garnetoxides, perovskite oxides, as well as oxide ferromagnetic materials suchas TMO (with T═Fe, Co or Ni; M═Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr or Mg)serving as a ferromagnetic material including oxygen. A similar effectalso could be observed with nitride ferromagnetic materials such as TNor TMN (with T and M as above) serving as a ferromagnetic materialincluding nitrogen. A similar effect also could be observed with TMC(with T and M as above) serving as a ferromagnetic material includingcarbon. A similar effect also was confirmed with Co(Fe)NbZr, Co(Fe)TaZr,CoFeB, Co(Fe)Ti, Co(Fe)Zr, Co(Fe)Nb, Co(Fe)MoBZr, Co(Fe)VZr,Co(Fe)MoSiZr, Co(Fe)MoZr, Co(Fe)MoVZr and Co(Fe)MnB as an amorphousmaterial.

WORKING EXAMPLE 14

Lower electrode wiring was applied by magnetron sputtering on a MOSsubstrate, and on the following multilayer films were formed on the MOSsubstrate, which has been subjected to CMP.

Sample 1

Ta(3)/Cu(500)/Ta(3)/NiFe(1)/FeCo(1)/Al₂O₃(Y)/CoFe(10)/PtMn(20)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/NiFe(2)/Ta(3)/NiFe(1)/FeCo(1)/Al₂O₃(Y)/CoFe(10)/PtMn(20)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/NiFe(3)/Ru(0.7)/FeCo(1)/Al₂O₃(Y)/CoFe(10)/PtMn(20)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 1 kΩμm of RAwas measured. The element shapes of these films were mesa-processedusing steppers into substantially elliptical shapes with a major axis“a” and a minor axis “b”, and elements were produced, in which the ratioa/b was 1, 1.5, 5, 10 and 12, respectively. In all elements, the lengthof “a” was set to 1000 nm, and the width of the word line and the senseline of the element was set to 2000 nm. After the microprocessing, theupper wiring was formed, and after hydrogen sintering at 400° C., amemory element as shown in FIG. 12A was obtained. The magnetizationdirection of the pinned magnetic layer of this memory element was set byapplying a magnetic field of 10 kOe in a vacuum of 240° C.

When the MOS was off, a current was sent through the word line and thesense line, writing into the free magnetic layer with the resultingcross magnetic field, and when the MOS was on, a sense current was sentthrough the elements, and the output when the magnetization of the freemagnetic layer was parallel to that of the pinned magnetic layer wascompared to the output when the magnetizations were antiparallel. Table12 shows the normalized power consumption necessary for writing into theelements, and Table 13 shows the normalized output.

TABLE 12 Sample 1 Sample 2 Sample 3 1 1 0.01 0.04 1.5 1.4 0.08 0.3 5 1.72 2.3 10 14.6 8.6 9.2 12 19.6 12 13

TABLE 13 Sample 1 Sample 2 Sample 3 1 1 1.2 1.1 1.5 1.1 1.3 1.2 5 1.21.5 1.4 10 1.3 1.4 1.2 12 0.9 1.1 1

From Table 12 and Table 13, it can be seen that Sample 2 and Sample 3 ofthis working example attain both a low power consumption and a highoutput. Of these, the highest output was attained when the ratio a/b ofthe element shape was in the range 1.5<a/b<10.

WORKING EXAMPLE 15

A magnetic sensor (see FIG. 13) was formed on an AlTiC substrate.

Sample 1

lower shield 301/magnetic separation layer302/PtMn(20)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1.5)/CoFe(1)/NiFe(3)

Sample 2

lower shield 301/magnetic separation layer302/PtMn(20)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1.5)/CoFe(1)/NiFe(3)/NiFe(4)/Ta(3)/NiFe(4)/magneticseparation layer 312/upper shield 311

Sample 3

lower shield 301/magnetic separation layer302/PtMn(20)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(1.5)/CoFe(1)/NiFe(3)/NiFe(5)/Ru(0.7)/NiFe(3)/magneticseparation layer 312/upper shield 311

Here, NiFe/Ta/NiFe and NiFe/Ru/NiFe correspond to the flux guide 310 (inFIG. 13). PtMn is an antiferromagnetic layer, CoFe/Ru/CoFe is a pinnedmagnetic layer 307, Al₂O₃ is a non-magnetic layer 306, and CoFe/NiFe isa free magnetic layer 305. These layers are formed with the insulatinglayer 303. Furthermore, thermal processing was performed first in thedirection of the flux guide at 280° C. and 5 kOe for 1.5 hours, and thenperpendicular to the flux guide (i.e. perpendicular to the paper planein FIG. 13) at 1800° C. with a magnetic field of 5 kOe for 1.5 hours.

Using three kinds of sensors, a reproduction test was performed, inwhich a HDD recording medium recorded at a track density of 9 OkTPI(tracks per inch) and a linear recording density of 550 kBPI (bits perinch) was reproduced at a data transfer speed of 211 Mbit/sec. Thefloating height of the head was set to 20 nm. The bit error rate of thehead was 1×⁻⁷ in Sample 1, 1×10⁻⁸ in Sample 2, and 1×10^(−8.5) in Sample3.

Thus, a magnetic sensor using the free magnetic layer of the presentinvention achieves a high BER.

WORKING EXAMPLE 16

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate in a uniaxial magnetic field.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(15)/CoFe(2)/Ru(0.7)/CoFe(2)/Al₂O₃(2)/CoFe(1)/NiFe(1)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/NiFe(4)/PtMn(15)/CoFe(2)/Ru(0.7)/CoFe(2)/Al₂O₃(2)/CoFe(1)/NiFe(1)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(2)/Ru(0.7)/CoFe(2)/Al₂O₃(2)/CoFe(1)/NiFe(1)/Ta(3)

Sample 4

Ta(3)/(Cu(5)/Ta(1))*100/NiFeCr(4)/PtMn(15)/CoFe(2)/Ru(0.7)/CoFe(2)/Al₂O₃(2)/CoFe(1)/NiFe(1)/Ta(3)

Sample 5

Ta(3)/Cu(500)/NiFe(1)/CoFe(1)/Al₂O₃(2)/CoFe(3)/Ru(0.7)/Co₃₀Fe₇₀/PtMn(15)/Ta(3)

Sample 6

Ta(3)/Cu(500)/NiFe(1)/CoFe(1)/Al₂O₃(2)/CoFe(3)/Ru(0.7)/Co₅₀Fe₅₀(3)/PtMn(15)/Ta(3)

Sample 7

Ta(3)/Cu(500)/NiFe(1)/CoFe(1)/Al₂O₃(2)/CoFe(3)/Ru(0.7)/Co₉₀Fe₁₀(3)/PtMn(15)/Ta(3)

Sample 8

Ta(3)/Cu(500)/NiFe(1)/CoFe(1)/Al20₃(2)/CoFe(3)/Ru(0.7)/Co₉₀Fe₁₀(1)/NiFe(2)/PtMn(15)/Ta(3)

These multilayer films were microprocessed using photolithography intomesa shapes with an element area of 2×61 μm², and after forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1 or FIG. 7. The results of the measurement of the MRafter the thermal processing at 300° C. to 400° C. in a magnetic fieldof 5 kOe are shown in Table 14.

It should be noted that the CoFe in Samples 1 to 8 was a Co₇₆Fe₂₄composition.

TABLE 14 Sample MR (%) 300° C. MR (%) 350° C. MR (%) 400° C. 1 48 22  92 49 48 39 3 50 48 43 4 50 49 46 5 45 18  6 6 44 28  8 7 47 35 30 8 4338 35

From Table 14, it can be seen that in Samples 1 to 4, in which the lowerfilm portion served as the pinned magnetic layer, the thermal resistanceof Sample 2 and Sample 3 using a NiFe or NiFeCr primer was better thanin Sample 1. It also can be confirmed that in Sample 4, in which theprimer electrode of Sample 3 is devised as a multilayer, the thermalresistance further improved. On the other hand, in Samples 5 to 8, inwhich the upper film portion served as the pinned magnetic layer, animprovement of the thermal resistance was observed when the CoFecomposition below the PtMn became richer in Co, or when the layer belowthe PtMn was NiFe.

It was found by X-ray diffraction that as the Co content increased, thebcc structure changed to a hcp or fcc structure. That the thermalresistance of this working example is higher than in other workingexamples is not only due to the optimized structure, but also depends onthe optimal formation of the Al₂O₃ layer.

Also when PtMn was substituted with PtPdMn, a similarly excellent highthermal resistance was confirmed.

Moreover, a preferable composition of the antiferromagnetic layer wasMn_(100-x)Me_(x) (Me being at least one selected from Pd and Pt), with Xin the range of 40≦X≦55 (in atomic weight %).

WORKING EXAMPLE 17

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/NiFe(5)/Ta(3)/NiFe(5)/Al₂O₃(0.9)/CoFe(3)/Ru(0.9)CoFe(3)/PtMn(15)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/NiFe(5)/Ru(0.9)/NiFe(5)/Al₂O₃(0.9)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/NiFe(5)/Ta(3)/NiFe(9)/Al₂O₃(0.9)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 4

Ta(3)/Cu(500)/Ta(3)/NiFe(5)/Ru(0.9)/NiFe(9)/Al₂O₃(0.9)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 5

Ta(3)/Cu(500)/Ta(3)/CoFe(4)/Ta(3)/NiFe(9)/Al₂O₃(0.9)/CoFe(3)/Ru(0.9)CoFe(3)/PtMn(15)/Ta(3)

Sample 6

Ta(3)/Cu(500)/Ta(3)/CoFe(4)/Ru(0.9)/NiFe(9)/Al₂O₃(0.9)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

For the CoFe(4) and NiFe(9) constituting the free magnetic layers inSample 5 and Sample 6, the product film thickness×saturationmagnetization was set to the same value. The free magnetic layers of theSamples 1, 3 and 5 seem to be coupled mainly by magnetostatic couplingwith Ta(3), which is a non-magnetic layer, whereas in the Samples 2, 4and 6, they seem to be coupled mainly by antiferromagnetic coupling withRu(0.9).

The multilayer films were thermally processed at 280° C. in a magneticfield of 5 kOe, and microprocessed using EB and photolithography intomesa shapes with element areas of 0.1×0.3, 0.3×0.3 and 1×3 μm². Theelements were processed so that the longitudinal direction of theelements was parallel to the direction of the thermal processing. Afterforming an inter-layer insulator film, an upper electrode was formed,yielding vertical current-type magneto-resistive elements with the crosssection shown in FIG. 1 and FIG. 7.

First, the elements with an element shape of 1×3 μim² were studied. TheMR when applying ±200 Oe was about 5% for Sample 2, whereas it was about30% for all other samples. Then, an external magnetic field of 200 Oewas applied in the longitudinal direction of the elements so that themagnetic resistance became maximal, and the magnetization direction wasstored in the free magnetic layer. To examine the memory stability ofthe elements of the Samples 1 and 3 to 6, a one-hour thermal stabilitytest at 250° C., and a disturbing magnetic field stability test in arotating magnetic field of ca. 5 Oe were performed. As a result, therewas no change of the resistance after both tests in the Samples 3 to 6.On the other hand, in Sample 1, a decrease of the element resistancecould be observed. Thus, it was found that with the configuration ofSamples 3 to 6, a stable storage of the magnetization direction in thefree magnetic layer is possible.

When the same tests were performed on the elements of 0.1×0.3 μm²,magnetic reversals at 200 Oe could not be performed adequately due tothe increase of the reversing field. On the other hand, a similarstorage stability as for 1×3 μm² could be confirmed for Sample 5 andSample 6.

When the same tests were performed on the elements of 0.3×0.3 μm²,although magnetic reversals could be performed with the Samples 3 to 6,storage stability could be confirmed only for Sample 5 and Sample 6.

Thus, it can be seen that that a memory effect can be provided when thefree magnetic layer is a multilayer film made of a magnetic layer and anon-magnetic layer with a different film thickness×saturationmagnetization, or when the film thickness×saturation magnetization isthe same, but the coercivity is different, and the dependency of thememory effect on the size and the shape of the element is particularlysmall in elements in which the film thickness×saturation magnetizationis the same.

WORKING EXAMPLE 18

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(Y)/NiFe(5)/Ru(0.7)/NiFe(3)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/PtMn(30)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ru(0.7)/NiFe(5)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 100 Ωμm of RAwas measured. The multilayer films were thermally processed at 240° C.in a magnetic field of 5 kOe, and microprocessed using photolithographyinto mesa shapes with an element area of 3×3 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements with the cross sectionshown in FIG. 1 and FIG. 7. FIG. 14 shows MR curves of Sample 1 andSample 2, and the magnetization state of the NiFe/Ru/NiFe layer servingas the free magnetic layer. In both Sample 1 and Sample 2, it was foundthat the magnetic layer with large film thickness ratio responds to anexternal magnetic field. Moreover, in both Sample 1 and Sample 2,different from regular spin-valve-type TMR, a maximum value of themagnetic resistance with respect to external fields could be observed,and it was found that in particular in Sample 2, in which the magneticlayer close to the intermediate layer in the free magnetic layer isthin, a maximum is evident. In Sample 1 and Sample 2, when the externalfield was increased in the positive direction, the magnetization statein the free magnetic layer changes from b′ to c′ or from b to c, butsince these are at a magnetization level leading to spin flops, they arereversible when the external field has been removed, and the initialmagnetization state of the free magnetic layer is not lost. Moreover, atthis level, especially in Sample 2, the MR changes considerably. It canbe seen that utilizing this it is possible to read out the magnetizationstate without destroying the magnetization state, with a configurationof the type as in Sample 2, when measuring the magnetic resistance withrespect to changes in the external magnetic field.

Here, “configuration of the type as in Sample 2” refers to amagneto-resistive element, in which at least one free magnetic layer ismade of three layers, namely a first magnetic layer, a non-magneticlayer and a second magnetic layer, layered in that order from the sideof the intermediate layer, and when the average film thickness of thefirst magnetic layer is d1, its average saturation magnetization is M1,the average film thickness of the second magnetic layer is d2, and itsaverage saturation magnetization is M2, then M2×d2>M1×d1, and themagnetic resistance displays at least one maximum or minimum withrespect to changes in the external magnetic field

WORKING EXAMPLE 19

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Ta(3)/Cu(500)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.7)/CoFe(3)/Al₂O₃(Y)/NiFe(4)/Ru(0.9)/NiFe(4)/Ru(0.9)/NiFe(7)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 100 Ωμm of RAwas measured. This multilayer film was thermally processed at 280° C. ina magnetic field of 5 kOe, and microprocessed using EB andphotolithography into a mesa shape with an element area of 0.5×1.5 μm².After forming an inter-layer insulator film, an upper electrode wasformed, yielding vertical current-type magneto-resistive elements withthe cross section shown in FIG. 1 or FIG. 7. FIG. 15 is a diagramshowing schematically, after the uppermost NiFe(7) layer wasmagnetically reversed by applying a magnetic field of 500 Oe in thelongitudinal direction and then the magnetic field was removed, themagnetization state of the magnetic layer when applying an externalmagnetic field of ±100 Oe. For the pinned layer 401, FIG. 15 shows onlythe configuration upward from the CoFe layer nearest to the intermediatelayer 402. In FIG. 15, B indicates a magnetically stable state, and whenan external magnetic field not greater than the magnetization reversalmagnetic field of the third magnetic layer (memory layer) 407 on thesecond non-magnetic layer 406 is applied, a change to the magnetizationstate A or C occurs. It should be noted that in order to simplify theillustration of the operation, the spin flop states are not shown inFIG. 15. Since the first magnetic layer 403 and the second magneticlayer 405 are antiferromagnetically coupled through the non-magneticlayer 404, the element returns to the state B when the external magneticfield is relatively small. In this situation, the change of the magneticresistance increases most with the change from B to A. FIG. 16illustrates the situation when the magnetization state of the magneticlayer 407 has been reversed. In FIG. 16, the magnetically stable stateis B, and a considerable reduction of resistance can be found at thechange from B to C.

Using this principle, the memory state of the magneto-resistive elementof this working example was detected. FIG. 17 shows the elementconfiguration.

A multilayer film of the reverse configuration order as above was formedon a substrate provided with a CMOS and a lower wiring. This multilayerfilm was thermally processed at 280° C. in a magnetic field of 5 kOe,and microprocessed using EB and photolithography into a mesa shape withan element area of 0.5×1.5 μm². After forming an inter-layer insulatorfilm, an upper electrode was formed, yielding an MRAM element as shownin FIGS. 17A and 17B.

The magnetization state was stored in the third magnetic layer by awriting operation, in which a current flows through both the word lineand the bit line. When reading, the CMOS switch connected in series tothe element was turned on, thus letting a sense current flow. In thissituation, a reading magnetic field was generated by letting a readcurrent flow in the word line, and the change of the voltage across theelement was read. FIG. 17B shows a state in which, because the readingmagnetic field and the magnetization direction of the intermediate layermatch, there is almost no voltage change with respect to the readingmagnetic field, so that it can be determined that the magnetization isparallel to the magnetization direction of the pinned magnetic layer.

Thus, it is shown that by devising the free magnetic layer as amultilayer, an MRAM element can be produced, with which themagnetization state of the memory can be read non-destructively.

WORKING EXAMPLE 20

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(4)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(2)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 3

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ta(3)/NiFe(5)/Al₂O₃(Y)/CoFe(3)/PtMn(15)/Ta(3)

Sample 4

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ta(3)/NiFe(5)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 5

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ru(0.9)/NiFe(5)/Al₂O₃(Y)/CoFe(3)/PtMn(15)/Ta(3)

Sample 6

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(2)/Ru(0.9)/CoFe(4)/Ru(0.9)/CoFe(2)/Al₂O₃(Y)/NiFe(3)/Ru(0.9)/NiFe(5)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)PtMn(15)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 300 Ωμm of RAwas measured. These multilayer films were thermally processed at 280° C.in a magnetic field of 5 kOe, and microprocessed using EB andphotolithography into a mesa shape with an element area of 0.1×0.3 μm².After forming an inter-layer insulator film, an upper electrode wasformed, yielding vertical current-type magneto-resistive elements withtwo intermediate layers. When a magnetic field was applied in thelongitudinal direction of the elements and the MR was measured, a changein the magnetic resistance of about 30% was attained at the optimummagnetic field in all elements except for Sample 2. In Sample 2, theNiFe layer was comparatively thin, so that no sufficient softness wasattained, an the change of the magnetic resistance was about 10%.Disregarding Sample 2, the coercivity of the elements was the strongestin Sample 1, and it seems that in Sample 1 the influence of thedemagnetizing field is stronger than in the other elements. Moreover, inSample 1, the non-symmetry of the MR curve was largest. It should benoted that in Sample 3 to Sample 5, the number of magnetic layersforming the pinned magnetic layer is non-symmetric with respect to theintermediate layer, because when the external magnetic field isrelatively weak, the two magnetic layers constituting the free magneticlayer are anti-parallel to one another. When a sufficiently largeexternal magnetic field is applied, the pinned and magnetic layers alsocan be configured to be symmetric with respect to the intermediatelayer. It should also be noted that in the configuration of Sample 3,when the external magnetic field becomes suitably strong, the MR isreduced substantially by half, and in the configuration of Sample 4,when the external magnetic field becomes suitably strong, the MR issubstantially doubled.

In the above working example, the free magnetic layer is sandwiched bytwo intermediate layers, and the free magnetic layers include twomagnetic layers and one non-magnetic layer that are layered inalternation, but a similar effect also can be attained when the freemagnetic layer includes 2n (with n=1, 2 . . . ) magnetic layers and 2n−1non-magnetic layer that are layered in alternation.

WORKING EXAMPLE 21

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ta(3)/NiFe(3)/Ta(3)/NiFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ru(0.9)/NiFe(3)/Ru(0.9)/NiFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 3

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ru(0.9)/NiFe(5)/Ru(0.9)/NiFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 4

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ru(0.9)/NiFe(6)/Ru(0.9)/NiFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 5

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(3)/Ru(0.9)/NiFe(7)/Ru(0.9)/NiFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 6

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(4)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

The film thickness Y of the Al208 was adjusted so that ca. 300 Ωμm of RAwas measured. These multilayer films were thermally processed at 280° C.in a magnetic field of 5 kOe, and microprocessed using EB andphotolithography into a mesa shape with an element area of 0.1×0.3 μm².After forming an inter-layer insulator film, an upper electrode wasformed, yielding vertical current-type magneto-resistive elements withtwo intermediate layers. When a magnetic field was applied in thelongitudinal direction of the elements and the MR was measured, a changein the magnetic resistance of about 30% was attained at the optimummagnetic field in all elements. However, in Sample 3, the increase ofthe MR at low magnetic fields was small, and in Sample 6, the coercivitywas largest. Furthermore, in Sample 2, an MR curve similar to the leftone in FIG. 14 was attained, and in Sample 4 and Sample 5, an MR curvesimilar to the right one in FIG. 15 was attained. Comparing Sample 3 andSample 4, the configuration of the free magnetic layer in Sample 3 isNiFe(3)/Ru(0.9)/NiFe(5)/Ru(0.9)/NiFe(3) whereas the configuration of thefree magnetic layer in Sample 4 isNiFe(3)/Ru(0.9)/NiFe(6)/Ru(0.9)/NiFe(3). Assuming that the magneticlayers are completely antiferromagnetically coupled, it seems thatjudging by the configuration, a complete magnetic circuit is formed bythe free magnetic layer, and the response to the external magnetic fieldseems to be poor for low magnetic fields. However, when taking Al₂O₃ andRu as the primer, and measuring by VSM the effective saturationmagnetization of the NiFe for various film thicknesses (saturationmagnetization reached at the magnetic field level when measuring theMR), it was found that the thinner the film thickness of the NiFe is,the effective smaller the saturation magnetization. Comparing (filmthickness)×(saturation magnetization) of Sample 3 and Sample 4 based onthis effective saturation magnetization, it was found that the sum ofthe (film thickness)×(saturation magnetization) of the first and thethird layer was substantially equal to the (film thickness)×(saturationmagnetization) of second layer, whereas in Sample 4, the value of forthe second layer was larger than the sum of the first and the thirdlayer. From this, it can be seen that the effective saturationmagnetization reflecting the film thicknesses of the primer and themagnetic layers should be taken into consideration for the filmconfiguration.

The above working example described a configuration in which a firstpinned magnetic layer, a first intermediate layer, a first magneticlayer, a first non-magnetic layer, a second magnetic layer, a secondnon-magnetic layer, a third magnetic layer, a second intermediate layer,and a second pinned magnetic layer were formed in that order, and whenan average film thickness of the magnetic layer n is dn, and its averagesaturation magnetization is Mn (with n=1, 2, 3), then M3×d3+M1×d1≠M2×d2.However, a similar effect can be attained when the free magnetic layerincludes 2n+1 magnetic layers (with n=1, 2 . . . ) and 2n non-magneticlayers, layered in alternation.

WORKING EXAMPLE 22

The following elements were produced by magnetron sputtering on a 6-inchthermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.7)CoFe(5)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.7)/NiFe(7)/Ta(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 1 Ωμm of RAwas measured. Here, the product (saturation magnetization)×(filmthickness) is substantially the same for CoFe(5) and NiFe(7) on a Ruprimer. These multilayer films were thermally processed at 280° C. in amagnetic field of 10 kOe, and microprocessed using an I-line stepperinto a mesa shape with an element area of 0.2×0.6 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements. When the MR of theelements was measured across the entire six inches of the wafer, it wasfound that the coercivity variations were about 10% with Sample 1,whereas the coercivity variations were about 5% with Sample 2. The filmthickness distribution of CoFe and NiFe in the six-inch wafer was inboth cases 3%, so that these variations cannot be explained easily. Onepossible reason for the coercivity variations seems to be the dependencyof the effective saturation magnetization on the film thickness. Whenthe effective saturation magnetization was determined while changing thefilm thicknesses of the CoFe and NiFe on the Ru primer, there was a 20%change in the effective saturation magnetization when changing thethickness of the 5 nm CoFe thin film by 1 nm, and there was a 5% changefor the case of NiFe. Furthermore, the change of the coercivity of theCoFe single layer and NiFe single layer with respect to similar filmthicknesses was about 15% for CoFe and about 2% for NiFe. Thus, it canbe said that in order to suppress variations of the coercivity whenmaking the area large, it is useful to use for the free magnetic layerswith multilayer structure magnetic layers with different saturationmagnetization or magnetic layers with different coercivity.

WORKING EXAMPLE 23

The following elements were produced by magnetron sputtering on a 6-inchthermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/NiFe(5)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/NiFe(5)/Ta(3)

Sample 3

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(2)/Ru(0.9)/CoFe(3.5)/Ru(0.9)/CoFe(2)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/NiFe(5)/Ta(3)

The film thickness Y of the A1203 was adjusted so that ca. 1 Ωμm of RAwas measured. These multilayer films were thermally processed at 280° C.in a magnetic field of 10 kOe, and microprocessed using lithography intomesa shape with an element area of 0.2×0.6 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements. The MR of the elementswas measured, making the direction of the external magnetic fieldconstant with respect to the thermal processing direction. In bothSample 1 and Sample 3, the polarity of the magnetic field matched withthe direction attaining the maximum or the minimum in the MR, and inSample 2, the opposite magnetic field characteristics were attained.When Sample 1 and Sample 2 or Sample 2 and Sample 3 were combined andthe operational output of the two elements was measured as shown in FIG.10, the output voltage was non-symmetrical at low magnetic fields withthe combination of Sample 1 and Sample 3. This seems to be because inSample 1, the pinned magnetic layer does not have a layeredferrimagnetic structure, thus leading to non-symmetric components.Consequently, to attain an operational output with good symmetry, as isdesirable for magnetic heads and MRAMs or the like, it is apparentlyimportant to combine a magneto-resistive element with a pinned magneticlayer in which 2n magnetic layers and (2n−1) non-magnetic layers arelayered in alternation from the intermediate layer, and amagneto-resistive element with a pinned magnetic layer in which (2n+1)magnetic layers and 2n non-magnetic layers are layered in alternationfrom the intermediate layer.

WORKING EXAMPLE 24

The following elements were produced by magnetron sputtering on a CMOSsubstrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/PtMn(15)/CoFe(3)/Al₂O₃(Y)/CoFe(5)/Ta(3)/CoFe(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Al₂O₃(Y)/CoFe(5)/Ta(3)/CoFe(3)

The film thickness Y of the Al₂O₃ was adjusted so that ca. 1 Ωμm of RAwas measured. These multilayer films were thermally processed at 260° C.in a magnetic field of 10 kOe, and microprocessed using lithography intomesa shape with an element area of 0.2×0.6 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements. After measuring the MRof the elements, the elements were repeatedly subjected to a thermalprocess at 400° C. for 30 min in a 5% hydrogen atmosphere withoutapplying a magnetic field, after which the MR was measured.

In Sample 1, the MR directly after forming the element was 30%, andafter the first 400° C. thermal process the MR decreased to 12%, andafter the second 400° C. thermal process the MR decreased to 10%. InSample 2, on the other hand, the MR directly after forming the elementwas 30%, after the first 400° C. thermal process, the MR decreased to20%, and after the second 400° C. thermal process, the MR decreased to19%. Both samples showed excellent thermal resistance, in spite of beingsubjected to a high temperature thermal process without magnetic fieldafter the thermal process for the uniaxial anisotropic formation of thepinned magnetic layer. Especially in Sample 2, in which NiFeCr was usedfor the primer layer of antiferromagnetic material, there was only asmall deterioration of the MR. When further samples were examined, itwas found that the thermal resistance in reducing atmospheres andwithout magnetic fields was about 450° C. When the wiring resistance ofthe elements was examined, it was found that after regular thermalprocessing under a magnetic field, the wiring resistance decreasedconsiderably when subjecting the elements to further thermal processesin a reducing atmosphere.

WORKING EXAMPLE 25

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al(0.4)—O/Al(0.3)—O/NiFe(5)/Ru(0.9)/NiFe(3)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al(0.4)—O/Al(0.35)—O/NiFe(5)/Ru(0.9)/NiFe(3)/Ta(3)

Sample 3

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al(0.4)—O/Al(0.3)—O./NiFe(5)/Ru(0.9)/NiFe(6)/Ru(0.9)/NiFe(5)/Al(0.4)—O/Al(0.3)—O./CoFe(3)/Ru(0.9)/CoFe (3)/PtMn(15)/Ta(3)

Sample 4

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al(0.4)—O/Al(0.3)—O./NiFe(5)/Ru(0.9)/NiFe(3)/Cu(5)/NiFe(3)/Ru(0.9)/NiFe(5)/Al(0.4)—O/Al(0.3)—O./CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 5

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al(0.4)—O/Al(0.3)—O./NiFe(5)/Ru(0.9)/NiFe(3)/Cu(5)/NiFe(5)/Ru(0.9)/NiFe(3)/Al(0.4)—O/Al(0.3)—O./CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Here, Co₇₅Fe₂₅ was used for the CoFe, Ni₆₀Fe₄₀ was used for the NiFe,Ni₄₉Fe₁₂Cr₃₉ was used for the NiFeCr, and Pt₅₀Mn₅₀ was used for PtMn.

“Al(0.4)—O/Al(0.3)—O” means an Al₂O₃ tunneling insulating layer made byforming a 0.4 nm thick film of Al, oxidizing that film in an oxygenatmosphere at 100 mTorr for 1 min, forming a 0.3 nm thick film of Al,and again oxidizing that film in an oxygen atmosphere at 100 mTorr for 1min. Also for Al(0.4)—O/Al(0.35)—O, similar Al films were formed andoxidized at 100 mTorr. Regarding the oxidation conditions, no largedifference could be observed from pressures of 10 mTorr to 600 mTorrwhen the oxidation time was about 1 min.

The multilayer films were thermally processed at 280° C. in a magneticfield of 5 kOe, and microprocessed using EB and photolithography intomesa shapes with an element area of 0.8×1.2 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements.

When applying a longitudinal magnetic field and measuring the MR of theelements, setting an element bias of about 1 mV in the optimum magneticfields for all elements, Sample 1 showed an MR of 40%, Sample 2 showedan MR of 43%, and Samples 3, 4 and 5 showed MRs of 39%, 40%, and 42%,respectively. When measuring with an element bias of about 500 mV,Sample 1 dropped to 23% and Sample 2 to 20%, thus cutting the MR in halfdue to the bias dependency. On the other hand, the MRs of Samples 3, 4and 5 were 35%, 36% and 35%, respectively. The RAs were 30 Ωμm² forSample 1, 70 Ωμm² for Sample 2, and 60 Ωμm² for Samples 3, 4 and 5. TheRA of Samples 3, 4 and 5 was twice as high as that of Sample 1, and alsothe MR at high device voltages of 500 mV was improved considerably. Thisseems to be due to the fact that the two tunneling insulating layers areconnected in series in Sample 3, 4 and 5. When the non-symmetry withrespect to external magnetic fields was examined in Samples 3, 4 and 5,the symmetry increased from Sample 3 to Sample 4 to Sample 5. This seemsto be due to the fact that the magnetic layers near the Al₂O₃ respondingto the external magnetic field are adjacent to one another in Sample 3,and magnetization rotations are performed while maintaining a parallelstate, whereas in Sample 4, the distance between the magnetic layersresponding to the external magnetic field is enlarged by thenon-magnetic conductive layer, and in Sample 5, the magnetizations thatare adjacent to one another through the non-magnetic conductive layercan rotate while maintaining an anti-parallel state, so that themagnetostatic energy is reduced. Moreover, when in the configuration ofSample 4 and Sample 5 a write test was performed with two matchingcurrents, as shown in FIG. 17, a high MR was attained with the samewriting current when the thickness of the Cu was 2.6 nm to 50 nm. Asimilar effect was attained when using other common non-magneticmaterials, such as Al, TiN, TiWN, CuAl, CuAlTi, Ag, Au or Pt instead ofCu as the conductive electrode material.

WORKING EXAMPLE 26

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(500)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Cu(5)/CoFe(1)/NiFe(3)/Ru(0.9)/NiFe(3)/Ta(3)

Sample 2

Ta(3)/Cu(500)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Cu(10)/CoFe(1)/NiFe(3)/Ru(0.9)/NiFe(3)/Ta(3)

Sample 3

Ta(3)/Cu(500)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Cu(5)/CoFe(1)/NiFe(3)/Ru(0.9)/NiFe(6)/Ru(0.9)/NiFe(3)/CoFe(1)/Cu(5)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 4

Ta(3)/Cu(500)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Cu(5)/CoFe(1)/NiFe(3)/Ru(0.9)/NiFe(3)/Cu(5)/NiFe(3)/Ru(0.9)/NiFe(5)/CoFe(1)/Cu(5)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 5

Ta(3)/Cu(500)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Cu(5)/CoFe(1)/NiFe(3)/Ru(0.9)/NiFe(3)/Cu(5)/NiFe(5)/Ru(0.9)/NiFe(3)/CoFe(1)/Cu(5)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Here, Co₉₀Fe, ₁₀ was used for the CoFe, Ni₆₀Fe₄₀ was used for the NiFe,Ni₄₉Fe₁₂Cr₃₉ was used for the NiFeCr, and Pt₅₀Mn₅₀ was used for PtMn.

The multilayer films were thermally processed at 280° C. in a magneticfield of 5 kOe, and microprocessed using EB and photolithography intomesa shapes with an element area of 0.5×0.5 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical current-type magneto-resistive elements.

When applying a magnetic field in the longitudinal direction of theelements and measuring the MR of the elements, setting an element biasof about 1 mV in the optimum magnetic fields for all elements, Sample 1showed an MR of 28%, Sample 2 showed an MR of 15%, and Samples 3, 4 and5 showed MRs of 49%, 47%, and 42%, respectively. When the non-symmetrywith respect to external magnetic fields was examined in Samples 3, 4and 5, the symmetry increased from Sample 3 to Sample 4 to Sample 5.

WORKING EXAMPLE 27

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃/NiFe(5)/Ru(0.9)/NiFe(3)/Ru(0.9)/NiFe(5)/Al₂O₃/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(20)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃/NiFe(5)/Ru(0.9)/NiFe(3)/Ru(0.9)/NiFe(5)/Al₂O₃/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Here, Co₇₆Fe₂₄ was used for the CoFe, Ni₆₀Fe₄₀ was used for the NiFe,Ni₄₉Fe₁₂Cr₃₉ was used for the NiFeCr, and Pt₅₀Mn₅₀ was used for PtMn.

The multilayer films were thermally processed at 280° C. in a magneticfield of 5 kOe, and microprocessed using EB and photolithography intomesa shapes with an element area of 0.5×0.5 μm². After forming aninter-layer insulator film, an upper electrode was formed, yielding avertical current-type magneto-resistive element.

When applying a magnetic field in the longitudinal direction of theelements and measuring the MR of the elements, setting an element biasof about 1 mV in the optimum magnetic fields for all elements, an MR of41% was measured, at 500 mV, an MR of 40% was measured, and at 1 V, anMR of 37% was measured. This showed that the bias dependency wasimproved considerably.

WORKING EXAMPLE 28

Sample 1

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃/NiFe(2)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/NiFe(2)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Sample 3

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/PtMn(15)/CoFe(3)/Ru(0.9)/CoFe(3)/Al₂O₃(Y)/NiFe(2)/NiFeCr(4)/Ta(3)

Sample 4

Ta(3)/Cu(50)/Ta(3)/NiFeCr(4)/NiFe(2)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(15)/Ta(3)

Here, Co₇₆Fe₂₄ was used for the CoFe, Ni₈₁Fe₁₉ was used for the NiFe,(Ni₈₁Fe₁₉)_(100-x)Cr_(x) was used for the NiFeCr, and Pt₅₀Mn₅₀ was usedfor PtMn. The film thickness Y of the Al₂O₃ was adjusted so that ca. 1kΩμm of RA was measured.

The multilayer films were thermally processed at 280° C. in a magneticfield of 5 kOe, and microprocessed using EB and photolithography intomesa shapes with an element area of 0.3×0.9 μm². After forming aninter-layer insulator film, an upper electrode was formed, yieldingvertical w current-type magneto-resistive elements.

When a magnetic field was applied in the longitudinal direction of theelements, and the MR was measured, a typical spin-valve type MR couldnot be observed in Sample 1 and Sample 2, and it seems that this is dueto the magnetism of the thinner NiFe layer. On the other hand, an MR ofabout 30% was attained with Sample 2 and Sample 3. When the MR wasmeasured for various X in (Ni₈₁Fe₁₉)_(100-x)Cr_(x), it was found that aspin-valve type MR is attained when X is 50 or less. However, when X is10 or less, the coercivity increases considerably, which is due to alarger magnetization of the NiFeCr and an increase of the demagnetizingfield. At this limit, the saturation magnetization of the NiFeCr wasabout 0.2 T. When X was 25, the saturation magnetization wassubstantially zero. A similar effect was also observed with Mo or Winstead of Cr. In this working example, the free magnetic layer was asingle layer with the composition Ni₈₁Fel₉, but the MR characteristicswere improved when making the free magnetic layer thinner (to about 1 to4 nm) with a buffer layer having a composition selected from(Ni₆₀Fe₄₀)_(100-x)(Cr, Mo, W)_(x) for Ni₆₀Fe₄₀, and(Ni₇₅Fe₂₅)_(100-x)(Cr, Mo, W)_(x) for Co₇₅Fe₂₅.

WORKING EXAMPLE 29

The following elements were produced by magnetron sputtering on athermally oxidized Si substrate.

Sample 1

Ta(3)/Cu(50)/Ta(3)/CoFe(1.25)/Ru(0.8)/CoFe(2.25)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(20)/Ta(3)

Sample 2

Ta(3)/Cu(50)/Ta(3)/CoFe(1.5)/Ru(0.8)/CoFe(2.5)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(20)/Ta(3)

Sample 3

Ta(3)/Cu(50)/Ta(3)/CoFe(2)/Ru(0.8)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(20)/Ta(3)

Sample 4

Ta(3)/Cu(50)/Ta(3)/CoFe(2)/Ru(0.8)/CoFe(4)/Ru(0.8)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(20)/Ta(3)

Sample 5

Ta(3)/Cu(50)/Ta(3)/CoFe(3)/Ru(0.8)/CoFe(5)/Ru(0.8)/CoFe(3)/Al₂O₃(Y)/CoFe(3)/Ru(0.9)/CoFe(3)/PtMn(20)/Ta(3)

Here, Co₇₅Fe₂₅ was used for the CoFe. The film thickness Y of the Al₂O₃was adjusted so that ca. 100 Ωμm of RA was measured.

The multilayer films were thermally processed at 280° C. in a magneticfield of 5 kOe, and microprocessed using EB and photolithography intomesa shapes with an element area of 0.1×0.2 μm². After forming aninter-layer insulator film, an upper electrode and a protective filmwere formed, yielding vertical current-type magneto-resistive elements.

Ten elements were made with each multilayer film. When a magnetic fieldwas applied in the longitudinal direction of the elements and the MR wasmeasured, the magnetization reversal magnetic field (coercivity) of allelements was substantially the same. Letting the elements performmagnetization reversal in the direction in which the MR becomes largest,increasing the element temperature to 200° C. and 300° C. in an inertgas, and then letting the elements stand for 24 hours, the memorystability for those temperatures was examined. As a result, it was foundthat at 200° C., 20% of the elements of Sample 1 lost the initial memorystate, whereas in the other samples, the initial memory state waspreserved. At 350° C., 40% of the elements of Sample 1, and 10% of theelements of Sample 2 lost their memory state, whereas the elements ofthe other samples preserved their initial memory state.

From the above, it can be seen that the total thickness of the magneticmaterial constituting the free magnetic layer should be at least 4 nm.Moreover, in this working example, CoFe was used for the magneticlayers, and when the tests were performed using NiFe, it was found thatthe total thickness should be at least 7 nm, and with Fe₃O₄ at least 10nm.

When measuring at an element bias of about 1 mV at the optimum magneticfield for all elements, Sample 1 showed an MR of 40%, Sample 2 showed anMR of 43%, and Samples 3, 4 and 5 showed an MR of 39%, 40% and 42%,respectively. When measuring at an element bias of about 500 mV, the MRdropped almost by half to 23% in Sample 1 and 20% in Sample 2, due tothe bias dependency. On the other hand, it was 35%, 36% and 35% inSamples 3, 4, and 5, respectively. The RAs were 30 Ωμm² for Sample 1, 70Ωμm² for Sample 2, 60 Ωμm² for Samples 3, 4 and 5. The RA of Samples 3,4 and 5 was twice as high as that of Sample 1, and at a high bias of 500mV, a significant improvement of the MR could be observed. This seems tobe due to the fact that the two tunneling insulating layers areconnected in series in Sample 3, 4 and 5. When the non-symmetry withrespect to external magnetic fields was examined in Samples 3, 4 and 5,the symmetry increased from Sample 3 to Sample 4 to Sample 5. This seemsto be due to the fact that the magnetic layers near the Al₂O₃ respondingto the external magnetic field are adjacent to one another in Sample 3,and magnetization rotations are performed while maintaining a parallelstate, whereas in Sample 4, the distance between the magnetic layersresponding to the external magnetic field is enlarged by thenon-magnetic conductive layer, and in Sample 5, the magnetizations thatare adjacent to one another through the non-magnetic conductive layercan rotate while maintaining an anti-parallel state, so that themagnetostatic energy is reduced. Moreover, when in the configuration ofSample 4 and Sample 5 a write test was performed with two matchingcurrents, as shown in FIG. 17, a high MR was attained with the samewriting current when the thickness of the Cu was 50 nm or less.

From the above, it can be seen that the total thickness of the magneticmaterial constituting the free magnetic layer should be at least 4 nm.Moreover, in this working example, CoFe was used for the magneticlayers, and when the tests were performed using NiFe, it was found thatthe total thickness should be at least 7 nm, and with Fe₃O₄ at least 10nm.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The embodimentsdisclosed in this application are to be considered in all respects asillustrative and not restrictive, the scope of the invention beingindicated by the appended claims rather than by the foregoingdescription. All changes that come within the meaning and range ofequivalency of the claims are intended to be embraced therein.

What is claimed is:
 1. A magneto-resistive element, comprising: anintermediate layer; and a pair of magnetic layers sandwiching theintermediate layer; wherein one of the magnetic layers is a freemagnetic layer in which magnetization rotation with respect to anexternal magnetic field is easier than in the other magnetic layer;wherein the free magnetic layer is a multilayer film including at leastone non-magnetic layer and magnetic layers sandwiching the non-magneticlayer; and wherein an element area, which is defined by the area of theintermediate layer through which current flows perpendicular to the filmplane, is not larger than 1000 μm², the non-magnetic layer is aconductor including a multilayer film with at least one layer ofnon-magnetic metal and at least one layer of non-magnetic materialselected from the group consisting of oxides, nitrides, carbides andborides.
 2. The magneto-resistive element according to claim 1, whereinan area of the free magnetic layer is larger than the element area. 3.The magneto-resistive element according to claim 1, wherein at least oneof the magnetic layers in the free magnetic layer has a coercivity orsaturation magnetization that is different from at least one of theother magnetic layers.
 4. The magneto-resistive element according toclaim 1, further comprising a lower electrode made of a metal multilayerfilm, wherein the magneto-resistive element is formed on the lowerelectrode.
 5. The magneto-resistive element according to claim 1,wherein the intermediate layer is made of an insulator or asemiconductor including at least one element selected from the groupconsisting of oxygen, nitrogen, carbon and boron.
 6. Themagneto-resistive element according to claim 1, wherein the freemagnetic layer serves as a magnetic memory layer.
 7. Themagneto-resistive element according to claim 1, wherein, when “a” is thelongest width of the element shape of the free magnetic layer, and “b”is its shortest width, then a/b is in the range of 1.5<a/b<10.
 8. Amethod for manufacturing a magneto-resistive element according to claim1, comprising additional heat treatment in a magnetic field at 200° C.to 400° C., after heat treatment at 300° C. to 450° C.
 9. A method formanufacturing a magneto-resistive element according to claim 1,comprising heat treatment in a magnetic field at 300° C. to 450° C. 10.A method for manufacturing a magneto-resistive element according toclaim 1, comprising: forming a multilayer film including anantiferromagnetic layer, a pinned layer, an intermediate layer and afree magnetic layer on a substrate; providing a uniaxial anisotropy byperforming heat treatment in a magnetic field at 200° C. to 350° C.;performing additional heat treatment in a reducing atmosphere at 300° C.to 450° C.
 11. A data communication terminal equipped with a pluralityof magneto-resistive elements according to claim 1, wherein data thathave been communicated by electromagnetic waves are stored in the freemagnetic layers of the magneto-resistive elements.
 12. Themagneto-resistive element according to claim 1, comprising a pinnedmagnetic layer, an intermediate layer and a free magnetic layer, whereinthe free magnetic layer is in contact with a buffer layer, wherein thebuffer layer is made of a composition in which 10 wt % to 50 wt % of anon-magnetic element is added to a composition of a magnetic layer incontact with the buffer layer, and wherein the saturation magnetizationof said composition is not more than 0.2T.
 13. The magneto-resistiveelement according to claim 12, wherein the buffer layer comprises atleast one selected from the group consisting of Cr, Mo and W.
 14. Themagneto-resistive element according to claim 1, further comprising aflux guide.
 15. The magneto-resistive element according to claim 14,wherein at least a portion of the free magnetic layer serves as the fluxguide.
 16. The magneto-resistive element according to claim 1, whereinthe intermediate layer is made of at least one metal selected fromtransition metals, or at least one conductive compound selected fromcompounds of transition metals with oxygen, nitrogen and boron; andwherein the element area is not larger than 0.01 μm^(2.)
 17. Themagneto-resistive element according to claim 16, wherein at least one ofthe magnetic layers sandwiching the intermediate layer comprises aferromagnetic material including oxygen, nitrogen or carbon, or anamorphous ferromagnetic material.
 18. The magneto-resistive elementaccording to claim 1, wherein, when the magnetic layers m are themagnetic layers in the free magnetic layer that are arranged atpositions m from the intermediate layer, where m is an integer of 1 orgreater, Mm is an average saturation magnetization of the magneticlayers m and dm is their respective average layer thickness, then thesum of the products Mm×dm for odd m is substantially equal to the sum ofthe products Mm×dm for even m.
 19. The magneto-resistive elementaccording to claim 18, the non-magnetic layer has a thickness d in therange of 2.6 nm≦d<10 nm.
 20. The magneto-resistive element according toclaim 1, wherein, when the magnetic layers m are the magnetic layers inthe free magnetic layer that are arranged at positions m from theintermediate layer, where m is an integer of 1 or greater, Mm is anaverage saturation magnetization of the magnetic layers m and dm istheir respective average layer thickness, then the sum of the productsMm×dm for odd m is different from the sum of the products Mm×dm for evenm.
 21. The magneto-resistive element according to claim 20, thenon-magnetic layer has a thickness d in the range of 2.6 nm≦d<10 nm. 22.The magneto-resistive element according to claim 20, wherein thenon-magnetic layer has a thickness d in the range of 0.3 nm<d<2.6 nm.23. The magneto-resistive element according to claim 20, wherein, whenthe free magnetic layer comprises a first magnetic layer, a non-magneticlayer and a second magnetic layer, layered in that order from theintermediate layer, and when an average film thickness of the firstmagnetic layer is d1, its average saturation magnetization is M1, anaverage film thickness of the second magnetic layer is d2, and itsaverage saturation magnetization is M2, then M2×d2>M1×d1; and whereinthe second magnetic layer is made of a soft magnetic material or a hardmagnetic material, and the first magnetic layer is made of a high spinpolarization material at least at an interface with the intermediatelayer.
 24. The magneto-resistive element according to claim 20, wherein,when the free magnetic layer comprises a first magnetic layer, anon-magnetic layer and a second magnetic layer, layered in that orderfrom the intermediate layer, and when an average film thickness of thefirst magnetic layer is d1, its average saturation magnetization is M1,an average film thickness of the second magnetic layer is d2, and itsaverage saturation magnetization is M2, then M2×d2>M1×d1; and themagnetic resistance displays at least one maximum or minimum withrespect to a change in the external magnetization.
 25. Themagneto-resistive element according to claim 20, wherein the freemagnetic layer comprises a first magnetic layer, a first non-magneticlayer, second magnetic layer, a second non-magnetic layer, and a thirdmagnetic layer, layered in that order from the intermediate layer, andwhen an average film thickness of the magnetic layer n is dn, and itsaverage saturation magnetization is Mn with being equal to 1, 2, or 3,M3×d3>M1×d1 and M3×d3>M2×d2; and wherein a coupling magnetic field ofthe first magnetic layer and the second magnetic layer is smaller than amemory reversal magnetic field, and the magnetization state of the thirdmagnetic layer is detected by applying a magnetic field that is smallerthan the memory reversal magnetic field but larger than the couplingmagnetic field in a memory direction of the magnetization of the thirdmagnetic layer.
 26. A magneto-resistive element comprising: amagneto-resistive element A according to claim 20, wherein the freemagnetic layer comprises a first magnetic layer, a non-magnetic layerand a second magnetic layer, layered in that order from the intermediatelayer, and wherein M2×d2>M1×d1, when an average film thickness of thefirst magnetic layer is d1, its average saturation magnetization is M1,an average film thickness of the second magnetic layer is d2, and itsaverage saturation magnetization is M2; and further comprising amagneto-resistive element B having a second intermediate layer and afree magnetic layer that comprises a third magnetic layer and a fourthmagnetic layer positioned in that order from the second intermediatelayer, and wherein M3×d3>M4×d4, when an average film thickness of thethird magnetic layer is d3, its average saturation magnetization is M3,an average film thickness of the fourth magnetic layer is d4, and itsaverage saturation magnetization is M4; wherein the element A and theelement B respond to the same external magnetic field, and the output ofelement A and element B are added to or subtracted from one another. 27.The magneto-resistive element according to claim 20, further comprisinga second intermediate layer, wherein the free magnetic layer, which ismade of a multilayer film, is sandwiched by the intermediate layers. 28.The magneto-resistive element according to claim 27 wherein the freemagnetic layer, which is made of a multilayer film, is made of 2nmagnetic layers when n being an integer of 1 or greater, and 2n−1non-magnetic layers layered in alternation.
 29. The magneto-resistiveelement according to claim 28, further comprising a first pinnedmagnetic layer and a second pinned magnetic layer, wherein the firstpinned magnetic layer, the first intermediate layer, the free magneticlayer, the second intermediate layer and the second pinned magneticlayer formed in that order, wherein the free magnetic layer is amultilayer film comprising a first magnetic layer, a non-magnetic layerand a second magnetic layer formed in that order from the side of thefirst pinned magnetic layer, and wherein, when an average film thicknessof the magnetic layer n is dn, with n being 1 or 2, and its averagesaturation magnetization is Mn, then M2×d2≠M1×d1.
 30. Themagneto-resistive element according to claim 27, wherein the freemagnetic layer, which is made of a multilayer film, is made of 2n+1magnetic layers with n being an integer of 1 or greater, and 2nnon-magnetic layers layered in alternation.
 31. The magneto-resistiveelement according to claim 30, further comprising a first pinnedmagnetic layer and a second pinned layer, wherein the first pinnedmagnetic layer, the first intermediate layer, the free magnetic layer,the second intermediate layer and the second pinned magnetic layerformed in that order, wherein the free magnetic layer is a multilayerfilm comprising a first magnetic layer, a first non-magnetic layer, asecond magnetic layer, a second non-magnetic layer and a third magneticlayer formed in that order from the side of the first pinned magneticlayer, and wherein, when an average film thickness of the magnetic layern is dn, with n being 1, 2, or 3, and its average saturationmagnetization is Mn, then M3×d3+M1×d1 ≠M2×d2.
 32. The magneto-resistiveelement according to claim 27, comprising a first pinned magnetic layer,a first intermediate layer, a first free magnetic layer, a non-magneticconductive layer, a second free magnetic layer, an second intermediatelayer and a second pinned magnetic layer formed in that order, whereinat least one of the first free magnetic layer and the second freemagnetic layer includes one or more magnetic layers and one or morenon-magnetic layers layered in alternation.
 33. The magneto-resistiveelement according to claim 32, wherein magnetic layers that are adjacentbut spaced apart by a non-magnetic conductive layer are magnetizedantiparallel to one another.
 34. The magneto-resistive element accordingto claim 32, wherein the non-magnetic conductive layer has a thicknessof 2.6 nm to 50 nm.
 35. The magneto-resistive element according to claim27, comprising four pinned magnetic layers, two free magnetic layers,and four intermediate layers, wherein at least one of the free magneticlayers is made of one or more magnetic layers and one or morenon-magnetic layers layered in alternation.
 36. A magneto-resistiveelement, comprising: an intermediate layer; and a pair of magneticlayers sandwiching the intermediate layer; wherein one of the magneticlayers is a pinned magnetic layer in which magnetization rotation withrespect to an external magnetic field is more difficult than in theother magnetic layer; wherein the pinned magnetic layer is a multilayerfilm comprising at least one non-magnetic layer and magnetic layerssandwiching the non-magnetic layer; wherein a thickness d of thenon-magnetic layer is in the range of 0.3 nm<d<2.6 nm; wherein thepinned magnetic layer is in contact with a primer layer or anantiferromagnetic layer; and wherein an element area, which is definedby the area of the intermediate layer through which current flowsperpendicular to the film plane, is not larger than 1000 μm², thenon-magnetic layer is a conductor including a multilayer film with atleast one layer of non-magnetic metal and at least one layer ofnon-magnetic material selected from the group consisting of oxides,nitrides, carbides and borides.
 37. The magneto-resistive elementaccording to claim 36, wherein, when the magnetic layers m are themagnetic layers in the pinned magnetic layer that are arranged atpositions m from the intermediate layer, where m is an integer of 1 orgreater, Mm is an average saturation magnetization of the magneticlayers m and dm is their respective average layer thickness, then thesum of the products Mm×dm for odd m is substantially equal to the sum ofthe products Mm×dm for even m.
 38. A magneto-resistive elementcomprising: a magneto-resistive element A including a first pinnedmagnetic layer, in which 2n magnetic layers and 2n−1 non-magnetic layers(with n being an integer of 1 or greater) are layered in alternationfrom the intermediate layer; and a magneto-resistive element B,including a second pinned magnetic layer, in n which 2n+1 magneticlayers and 2n non-magnetic layers are layered in alternation from theintermediate layer; wherein at least one of the element A and theelement B is as claimed in claim 19; wherein the element A and theelement B respond to the same external magnetic field; and wherein theoutputs of element A and element B are added to or subtracted from oneanother.
 39. The magneto-resistive element according to claim 36,wherein the primer layer includes at least one element selected from Cuand the elements of groups IVa to VIa and VIII but excluding Fe, Co, andNi.
 40. The magneto-resistive element according to claim 36, wherein theprimer layer is in contact with a magnetic layer, and the primer layerand that magnetic layer have at least one crystal structure selectedfrom fcc and hcp structure, or the primer layer and that magnetic layerboth include a bcc structure.
 41. The magneto-resistive elementaccording to claim 36, wherein the antiferromagnetic layer has acomposition that can be expressed by Mn_(100-x)Me_(x) wherein Me is atleast one selected from the group consisting of Pd, and Pt, and 40≦×≦55.42. The magneto-resistive element according to claim 36, wherein atleast the magnetic layer in contact with the antiferromagnetic layer ismade of Co.
 43. The magneto-resistive element according to claim 36,wherein the magnetic layer in contact with at least one selected fromthe antiferromagnetic layer and the non-magnetic layer is made of aferromagnetic material including at least one element selected from thegroup consisting of oxygen, nitrogen and carbon.
 44. Themagneto-resistive element according to claim 36, wherein the magneticlayer in contact with at least one selected from the antiferromagneticlayer and the non-magnetic layer is made of an amorphous ferromagneticmaterial.
 45. The magneto-resistive element according to claim 36,further comprising a lower electrode made of a metal multilayer film,wherein the magneto-resistive element is formed on the lower electrode.46. The magneto-resistive element according to claim 36, wherein theintermediate layer is made of an insulator or a semiconductor includingat least one element selected from the group consisting of oxygen,nitrogen, carbon and boron.
 47. The magneto-resistive element accordingto claim 36, wherein the free magnetic layer serves as a magnetic memorylayer.
 48. The magneto-resistive element according to claim 36, wherein,when “a” is the longest width of the element shape of the free magneticlayer, and “b” is its shortest width, then a/b is in the range of1.5<a/b<10.
 49. A method for manufacturing a magneto-resistive elementaccording to claim 36, comprising additional heat treatment in amagnetic field at 200° C. to 400° C., after heat treatment at 300° C. to450° C.
 50. A method for manufacturing a magneto-resistive elementaccording to claim 36, comprising heat treatment in a magnetic field at300° C. to 450° C.
 51. A method for manufacturing a magneto-resistiveelement according to claim 36, comprising: forming a multilayer filmincluding an antiferromagnetic layer, a pinned layer, an intermediatelayer and a free magnetic layer on a substrate; providing a uniaxialanisotropy by performing heat treatment in a magnetic field at 200° C.to 350° C.; performing additional heat treatment in a reducingatmosphere at 300° C. to 450° C.
 52. A data communication terminalequipped with a plurality of magneto-resistive elements according toclaim 36, wherein data that have been communicated by electromagneticwaves are stored in the free magnetic layers of the magneto-resistiveelements.
 53. The magneto-resistive element according to claim 36,comprising a pinned magnetic layer, an intermediate layer and a freemagnetic layer, wherein the free magnetic layer is in contact with abuffer layer, wherein the buffer layer is made of a composition in which10 wt % to 50 wt % of a non-magnetic element is added to a compositionof a magnetic layer in contact with the buffer layer, and wherein thesaturation magnetization of said composition is not more than 0.2T. 54.The magneto-resistive element according to claim 53, wherein the bufferlayer comprises at least one selected from the group consisting of Cr,Mo and W.
 55. The magneto-resistive element according to claim 36,further comprising a flux guide.
 56. The magneto-resistive elementaccording to claim 55, wherein at least a portion of the free magneticlayer serves as the flux guide.
 57. The magneto-resistive elementaccording to claim 36, wherein the intermediate layer is made of atleast one metal selected from transition metals, or at least oneconductive compound selected from compounds of transition metals withoxygen, nitrogen and boron; and wherein the element area is not largerthan 0.01 μm^(2.)
 58. The magneto-resistive element according to claim57, wherein at least one of the magnetic layers sandwiching theintermediate layer comprises a ferromagnetic material including oxygen,nitrogen or carbon, or an amorphous ferromagnetic material.
 59. Themagneto-resistive element according to claim 36, wherein theantiferromagnetic layer is formed on a primer layer, and the primerlayer and the antiferromagnetic layer include at least one crystalstructure selected from fcc, fct, hcp and hct structure, or the primerlayer and the antiferromagnetic layer both include a bcc structure. 60.The magneto-resistive element according to claim 59, wherein the primerlayer is made of NiFe or NiFeCr; and which has been thermally processedat a temperature of at least 300° C.
 61. The magneto-resistive elementaccording to claim 36, wherein the antiferromagnetic layer is made of Crand at least one selected from the group consisting of Mn, Te, Ru, Rh,Re, Os, Ir, Pd, Pt, Ag, Au and Al.
 62. The magneto-resistive elementaccording to claim 61, wherein the antiferromagnetic layer has acomposition that can be expressed by Cr_(100-x)Me_(x), where Me is atleast one selected from the group consisting of Re, Ru, and Rh, and0.1≦×≦20.